公开(公告)号：US20240387089A1

公开(公告)日：2024-11-21

申请号：US18785018

申请日：2024-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongchun RYU ,  Seungjae LEE ,  Naoki HASE ,  Kwangseok KIM

IPC: H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

公开(公告)号：US20240334840A1

公开(公告)日：2024-10-03

申请号：US18742115

申请日：2024-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Seungjae LEE ,  Naoki HASE

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

公开(公告)号：US20240251685A1

公开(公告)日：2024-07-25

申请号：US18492181

申请日：2023-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Naoki HASE ,  Jeongchun RYU ,  Jungsik PARK

IPC: H10N50/20 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/20 ,  H10B61/00 ,  H10N50/85

Abstract: A magnetic memory device may include a spin current channel layer, a wiring crossing the spin current channel layer, and an MTJ layer at an intersection of the spin current channel layer and the wiring. The spin current channel layer may include an MgO-based layer and a beta (β)-phase tungsten (W) layer on the MgO-based layer. The beta (β)-phase tungsten (W) layer may be in contact with the MTJ layer.

公开(公告)号：US20230019156A1

公开(公告)日：2023-01-19

申请号：US17735599

申请日：2022-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Kiwoong KIM ,  Naoki HASE

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a first free layer adjacent to the first oxide layer and a second free layer adjacent to the second oxide layer. The first free layer includes a magnetic material not doped with a non-magnetic metal, and the second free layer includes a magnetic material doped with the non-magnetic metal.

公开(公告)号：US20230020056A1

公开(公告)日：2023-01-19

申请号：US17701056

申请日：2022-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Seungjae LEE ,  Naoki HASE

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  G11C11/16

Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

公开(公告)号：US20220285607A1

公开(公告)日：2022-09-08

申请号：US17584916

申请日：2022-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Naoki HASE ,  Seungjae LEE

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10

Abstract: Provided are magnetic tunneling junction devices, memory devices including the magnetic tunneling junction devices, and methods of manufacturing the magnetic tunneling junction devices. The magnetic tunneling junction device includes a first magnetic layer; a second magnetic layer disposed to face the first magnetic layer; and a first oxide layer disposed between the first magnetic layer and the second magnetic layer and including a metal oxide, wherein the metal oxide of the first oxide layer has a stoichiometrically oxygen-deficient composition, and wherein the second magnetic layer includes a magnetic material doped with a metal element.

公开(公告)号：US20230207177A1

公开(公告)日：2023-06-29

申请号：US17847099

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongchun RYU ,  Seungjae LEE ,  Naoki HASE ,  Kwangseok KIM

IPC: H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22

CPC classification number: H01F10/3272 ,  H01L43/08 ,  H01L43/10 ,  H01F10/3286 ,  G11C11/161 ,  H01L27/222

Abstract: A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

公开(公告)号：US20230059590A1

公开(公告)日：2023-02-23

申请号：US17982955

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Seungjae LEE ,  Naoki HASE

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.