公开(公告)号：US20230207177A1

公开(公告)日：2023-06-29

申请号：US17847099

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongchun RYU ,  Seungjae LEE ,  Naoki HASE ,  Kwangseok KIM

IPC: H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22

CPC classification number: H01F10/3272 ,  H01L43/08 ,  H01L43/10 ,  H01F10/3286 ,  G11C11/161 ,  H01L27/222

Abstract: A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

公开(公告)号：US20230225219A1

公开(公告)日：2023-07-13

申请号：US17847103

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Kiwoong KIM ,  Jeongchun RYU ,  Seonggeon PARK

IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01F10/32 ,  H01L43/12 ,  G01R33/09 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01F10/3272 ,  H01L43/12 ,  G01R33/098 ,  H01L43/02

Abstract: Provided are a magnetic tunneling junction device having a relatively high tunneling magnetoresistance (TMR) ratio; and a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes: a pinned layer having a first surface and a second surface opposite the first surface; a seed layer disposed in contact with the first surface of the pinned layer; a free layer disposed to face the second surface of the pinned layer; and a tunnel barrier layer disposed between the pinned layer and the free layer, wherein the seed layer includes at least one amorphous material selected from CoFeX and CoFeXTa, and the X includes at least one element selected from niobium (Nb), molybdenum (Mo), tungsten (W), chromium (Cr), zirconium (Zr), and hafnium (Hf). The seed layer may not include boron.

公开(公告)号：US20240387089A1

公开(公告)日：2024-11-21

申请号：US18785018

申请日：2024-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongchun RYU ,  Seungjae LEE ,  Naoki HASE ,  Kwangseok KIM

IPC: H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

公开(公告)号：US20240321333A1

公开(公告)日：2024-09-26

申请号：US18459823

申请日：2023-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongchun RYU ,  Seungjae LEE ,  Kwangseok KIM

IPC: G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetic tunneling junction device includes a synthetic antiferromagnet, a separation metal layer disposed on the synthetic antiferromagnet, a free layer disposed on the separation metal layer and having a variable magnetization direction, an oxide layer disposed on the free layer, and a pinned layer disposed on the oxide layer and having a pinned magnetization direction. The synthetic antiferromagnet may include a first ferromagnetic layer, a non-magnetic metal layer disposed on the first ferromagnetic layer, and a second ferromagnetic layer disposed on the non-magnetic metal layer. Magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer may be opposite to each other in an in-plane direction and aligned to be inclined with respect to a direction of a current applied to the synthetic antiferromagnet.

公开(公告)号：US20240251685A1

公开(公告)日：2024-07-25

申请号：US18492181

申请日：2023-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Naoki HASE ,  Jeongchun RYU ,  Jungsik PARK

IPC: H10N50/20 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/20 ,  H10B61/00 ,  H10N50/85

Abstract: A magnetic memory device may include a spin current channel layer, a wiring crossing the spin current channel layer, and an MTJ layer at an intersection of the spin current channel layer and the wiring. The spin current channel layer may include an MgO-based layer and a beta (β)-phase tungsten (W) layer on the MgO-based layer. The beta (β)-phase tungsten (W) layer may be in contact with the MTJ layer.

公开(公告)号：US20230225220A1

公开(公告)日：2023-07-13

申请号：US17983796

申请日：2022-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Kiwoong KIM ,  Jeongchun RYU ,  Seonggeon PARK

IPC: H01L43/08 ,  H01L43/10 ,  G01R33/09 ,  H01L27/22 ,  H01L43/12 ,  H01F10/32 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L43/08 ,  H01L43/10 ,  G01R33/098 ,  H01L27/222 ,  H01L43/12 ,  H01F10/3272 ,  H01L43/02 ,  G11C11/161

Abstract: Provided are a magnetic tunneling junction device having a relatively high tunneling magnetoresistance (TMR) ratio; and a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes: a pinned layer having a first surface and a second surface opposite the first surface; a seed layer disposed in contact with the first surface of the pinned layer; a free layer disposed to face the second surface of the pinned layer; and a tunnel barrier layer disposed between the pinned layer and the free layer, wherein the seed layer includes at least one amorphous material selected from CoFeX and CoFeXTa, and the X includes at least one element selected from niobium (Nb), molybdenum (Mo), tungsten (W), chromium (Cr), zirconium (Zr), and hafnium (Hf). The seed layer may not include boron.

公开(公告)号：US20230040502A1

公开(公告)日：2023-02-09

申请号：US17723845

申请日：2022-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byongguk PARK ,  Jeong-Heon PARK ,  Kyung-Jin LEE ,  Jeongchun RYU

IPC: H01L43/04 ,  H01L43/06 ,  H01F10/32 ,  H01L27/22 ,  G11C11/16

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, and a magnetic layer on a second surface of the conductive line, which is opposite to the first surface. The magnetic layer includes magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction.