Invention Application
- Patent Title: LATERAL POWER SEMICONDUCTOR DEVICE
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Application No.: US18382561Application Date: 2023-10-23
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Publication No.: US20240395930A1Publication Date: 2024-11-28
- Inventor: Ming QIAO , Yue GAO , Jiawei WANG , Dingxiang MA , Bo ZHANG
- Applicant: University of Electronic Science and Technology of China
- Applicant Address: CN Chengdu
- Assignee: University of Electronic Science and Technology of China
- Current Assignee: University of Electronic Science and Technology of China
- Current Assignee Address: CN Chengdu
- Priority: CN2023105919083 20230524
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/423
Abstract:
A lateral power semiconductor device is provided and includes a second doping type substrate, a first doping type buried layer, a second doping type epitaxial layer, a first doping type drift area, a second doping type first body area, a first doping type drain area, a first doping type source area, a second doping type second body area, a dielectric layer, a control gate, a body electrode, second doping type polysilicon and first doping type polysilicon. The control gate is led out and connected to different potentials; when the device is in an off state, the control gate is connected to a low potential to assist the drift area in depletion; and when the device is in an on state, the control gate is connected to a high potential, and more carriers are induced on a silicon surface below the control gate.
Information query
IPC分类:
