Invention Application
- Patent Title: CIRCUITS AND METHODS FOR GATE OVERDRIVE IN GAN POWER STAGES
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Application No.: US18733480Application Date: 2024-06-04
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Publication No.: US20240405764A1Publication Date: 2024-12-05
- Inventor: Nabil Akel , Jason Zhang , Victor Sinow , Thomas Ribarich
- Applicant: Navitas Semiconductor Limited
- Applicant Address: IE Dublin
- Assignee: Navitas Semiconductor Limited
- Current Assignee: Navitas Semiconductor Limited
- Current Assignee Address: IE Dublin
- Main IPC: H03K17/10
- IPC: H03K17/10 ; H02M1/08 ; H03K17/081

Abstract:
A circuit is disclosed. The circuit includes a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal, a driver circuit having an output terminal coupled to the gate terminal, where the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is at a first voltage when a voltage at the drain terminal is below a predetermined voltage; the output voltage is at a second voltage when 1) the voltage at the drain terminal is above the predetermined voltage and 2) a time period during which the output voltage is at the second voltage is less than a predetermined time. In one aspect, the second voltage is greater than the first voltage.
Information query