公开(公告)号：US20240405764A1

公开(公告)日：2024-12-05

申请号：US18733480

申请日：2024-06-04

Applicant: Navitas Semiconductor Limited

Inventor： Nabil Akel ,  Jason Zhang ,  Victor Sinow ,  Thomas Ribarich

IPC: H03K17/10 ,  H02M1/08 ,  H03K17/081

Abstract: A circuit is disclosed. The circuit includes a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal, a driver circuit having an output terminal coupled to the gate terminal, where the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is at a first voltage when a voltage at the drain terminal is below a predetermined voltage; the output voltage is at a second voltage when 1) the voltage at the drain terminal is above the predetermined voltage and 2) a time period during which the output voltage is at the second voltage is less than a predetermined time. In one aspect, the second voltage is greater than the first voltage.