Invention Application
- Patent Title: OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND MASK MANUFACTURING METHOD COMPRISING OPC METHOD
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Application No.: US18632558Application Date: 2024-04-11
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Publication No.: US20250036022A1Publication Date: 2025-01-30
- Inventor: Sanghwa Woo , Wooseok Kim , Bongkeun Kim , Sanghwa Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2023-0096407 20230724
- Main IPC: G03F1/36
- IPC: G03F1/36
Abstract:
Provided is an optical proximity correction (OPC) method including receiving a design layout for a target pattern to be formed on a substrate, obtaining a first OPC pattern by performing a baseline OPC on the design layout, and obtaining a second OPC pattern by curving the first OPC pattern.
Information query
