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1.发明申请公开(公告)号：US20250036022A1
公开(公告)日：2025-01-30
申请号：US18632558
申请日：2024-04-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sanghwa Woo , Wooseok Kim , Bongkeun Kim , Sanghwa Lee
IPC: G03F1/36
Abstract: Provided is an optical proximity correction (OPC) method including receiving a design layout for a target pattern to be formed on a substrate, obtaining a first OPC pattern by performing a baseline OPC on the design layout, and obtaining a second OPC pattern by curving the first OPC pattern.
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