MULTI-GATE FET WITH SELF-ALIGNED TAPERED ACTIVE REGION EDGE

Invention Application

US20250048695A1 MULTI-GATE FET WITH SELF-ALIGNED TAPERED ACTIVE REGION EDGE 有权

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Patent Title: MULTI-GATE FET WITH SELF-ALIGNED TAPERED ACTIVE REGION EDGE
Application No.: US18365989

Application Date: 2023-08-05
Publication No.: US20250048695A1

Publication Date: 2025-02-06
Inventor: Reinaldo Vega , Takashi Ando , James P. Mazza , Nicholas Anthony Lanzillo , David Wolpert
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Applicant Address: US NY ARMONK
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee Address: US NY ARMONK
Main IPC: H01L29/08
IPC: H01L29/08 ; H01L21/3065 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/775

MULTI-GATE FET WITH SELF-ALIGNED TAPERED ACTIVE REGION EDGE

Abstract:

A semiconductor device includes a substrate and a plurality of stacked transistors positioned on the substrate. The transistors include a gate region and a source and drain proximate the gate region. The source and drain includes an overall region and an active region. A thickness of the active region is less than a thickness of the overall region.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的
H01L29/08	...具有连接到1个通有待整流、放大或切换的电流的电极上去的半导体区域的；并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的