Disclosed is a substrate processing apparatus including: a support unit for supporting a substrate and rotating the substrate; a solution discharge unit for discharging a processing solution including a first material and a second material onto the substrate to remove a film on the substrate; and a controller for controlling the solution discharge unit, in which the controller sets, when the solution discharge unit discharges the processing solution to a first position and a second position on the substrate, a hydrogen ion concentration of the processing solution discharged to the first position to be different from a hydrogen ion concentration of the processing solution discharged to the second position, and the first position is a center of the substrate or is located closer to the center of the substrate than the second position.