Invention Application
- Patent Title: SYSTEMS AND METHODS FOR SELECTIVE METAL-CONTAINING HARDMASK REMOVAL
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Application No.: US18244583Application Date: 2023-09-11
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Publication No.: US20250087494A1Publication Date: 2025-03-13
- Inventor: Baiwei Wang , Rohan Puligoru Reddy , Xiaolin C. Chen , Wanxing Xu , Zhenjiang Cui , Anchuan Wang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a metal-containing hardmask material and an exposed region of a material characterized by a dielectric constant of less than or about 4.0. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the metal-containing hardmask material.
Information query
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