公开(公告)号：US20240258116A1

公开(公告)日：2024-08-01

申请号：US18101932

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Wanxing Xu ,  Lisa J. Enman ,  Aaron Dangerfield ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Mikhail Korolik ,  Bhaskar Jyoti Bhuyan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31122 ,  H01L21/02186 ,  H01L21/02315 ,  H01L21/0234

Abstract: Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a titanium-containing material. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the titanium-containing material.

公开(公告)号：US20250087494A1

公开(公告)日：2025-03-13

申请号：US18244583

申请日：2023-09-11

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Wanxing Xu ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/311

Abstract: Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a metal-containing hardmask material and an exposed region of a material characterized by a dielectric constant of less than or about 4.0. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the metal-containing hardmask material.

公开(公告)号：US20230386830A1

公开(公告)日：2023-11-30

申请号：US17827356

申请日：2022-05-27

Applicant: Applied Materials, Inc.

Inventor： Xiaolin C. Chen ,  Baiwei Wang ,  Rohan Puligoru Reddy ,  Wanxing Xu ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/02 ,  H01L29/423 ,  H01L29/49 ,  H01L21/311

CPC classification number: H01L21/02244 ,  H01L29/42392 ,  H01L29/495 ,  H01L21/31122

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a semiconductor processing chamber, where a substrate may be positioned. The substrate may include a trench formed between two columns and molybdenum-containing metal regions in a plurality of recesses formed in at least one of the columns. At least two of the molybdenum-containing metal regions may be connected by a molybdenum-containing first liner formed on at least a portion of a sidewall of the trench. The methods may include forming a plasma of the oxygen-containing precursor. The methods may include contacting the molybdenum-containing first liner with plasma effluents of the oxygen-containing precursor, thereby forming an oxidized portion of molybdenum. The methods may include providing a halide precursor. The methods may include contacting oxidized portion of the molybdenum with plasma effluents of the halide precursor, thereby removing the oxidized portion of molybdenum from the sidewall of the trench.