发明授权
US3658598A Method of crucible-free zone melting crystalline rods, especially of semiconductor material 失效
无结晶区熔体晶体管的方法,特别是半导体材料

  • 专利标题: Method of crucible-free zone melting crystalline rods, especially of semiconductor material
  • 专利标题(中): 无结晶区熔体晶体管的方法,特别是半导体材料
  • 申请号: US3658598D
    申请日: 1969-08-19
  • 公开(公告)号: US3658598A
    公开(公告)日: 1972-04-25
  • 发明人: KELLER WOLFGANGBERGER GUNTHER
  • 申请人: SIEMENS AG
  • 专利权人: Siemens Ag
  • 当前专利权人: Siemens Ag
  • 优先权: DES0098115 1965-07-10; DES0089317 1964-02-01; DES0098712 1965-08-07; NL6506040 1965-05-12
  • 主分类号: C30B13/28
  • IPC分类号: C30B13/28 C30B13/30 C30B13/32 C30B15/08 B01J17/02 B01D9/00
Method of crucible-free zone melting crystalline rods, especially of semiconductor material
摘要:
Method of zone melting a semiconductor rod includes displacing an end holder of the vertically held rod transversely to the rod axis, continuously displacing the other end holder vertically so as to feed a rod portion, having a diameter greater than the inner diameter of an annular heating device surrounding the rod and forming a melting zone therein, into the melting zone, forming a diametrical constriction in the melting zone, displacing the one end holder vertically and rotating it until the rod portion located between it and the melting zone is formed to a specific diameter larger than the inner diameter of the heating device and, after forming the rod portion to the specific cross section, vertically displacing the end holders elative to the heating device.
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