公开(公告)号：US4068814A

公开(公告)日：1978-01-17

申请号：US733237

申请日：1976-10-18

Applicant: Thomas R. Anthony ,  Harvey E. Cline

Inventor： Thomas R. Anthony ,  Harvey E. Cline

IPC: H01L21/687 ,  B01J17/12 ,  B01J17/02

CPC classification number: H01L21/68728 ,  H01L21/68785 ,  Y10S117/90 ,  Y10T117/1076

Abstract: A semiconductor body holder includes a rigid refractory base having a plurality of flexible refractory arms extending from one end thereof. Each arm includes a finger extending therefrom, the fingers in cooperation with the arms, serving to resiliently hold a body of semiconductor material during processing. The holder of the present invention is particularly useful in the practice of temperature gradient zone melting on the semiconductor body.

公开(公告)号：US3694269A

公开(公告)日：1972-09-26

申请号：US3694269D

申请日：1970-11-13

Applicant: GEN MOTORS CORP

Inventor： BAILEY DONALD J ,  BREWER EARL G

IPC: C30B1/02 ,  B01J17/02

CPC classification number: C30B1/02 ,  C30B29/02

Abstract: LARGE SINGLE CRYSTALS OF IRON ARE GROWN FROM A WELL ANNEALED, UNIFORMLY FINE-GRAINED SPECIMEN WHICH HAS BEEN GIVEN A SMALL AMOUNT OF PLASTIC STRAIN AND THEN HEATED TO INDUCE RECRYSTALLIZATION AT ONE SITE IN THE SPECIMEN. THE RECRYSTALLIZATION NUCLEUS IS ENLARGED AT THE EXPENSE OF ADJACENT STRAINED, FINE-GRAINED CRYSTALS BY REPEATEDLY HEATING THE SPECIMENT TO A TEMPERATURE ABOVE ABOUT 750* C. BUT BELOW ABOUT 910*C, FOR A PERIOD OF MINUTES AND THEN COOLING BELWO 750*C. THE DURATION OF HEATING AT THE ELEVATED TEMPERATURE OF EACH CYCLE IS SUCH THAT SUBSTANTIAL CRYSTAL GROWTH ON THE ORIGINAL NUCLEUS OCCURS BUT ADDITIONAL NUCLEATION TAKES PLACE IN THE REST OF THE IRON SPECIMEN.

公开(公告)号：US3658598A

公开(公告)日：1972-04-25

申请号：US3658598D

申请日：1969-08-19

Applicant: SIEMENS AG

Inventor： KELLER WOLFGANG ,  BERGER GUNTHER

IPC: C30B13/28 ,  C30B13/30 ,  C30B13/32 ,  C30B15/08 ,  B01J17/02 ,  B01D9/00

CPC classification number: C30B13/30 ,  C30B13/28 ,  C30B13/32 ,  C30B15/08 ,  Y10S117/901 ,  Y10S117/91 ,  Y10S117/911 ,  Y10S117/912 ,  Y10S117/917 ,  Y10T117/1072

Abstract: Method of zone melting a semiconductor rod includes displacing an end holder of the vertically held rod transversely to the rod axis, continuously displacing the other end holder vertically so as to feed a rod portion, having a diameter greater than the inner diameter of an annular heating device surrounding the rod and forming a melting zone therein, into the melting zone, forming a diametrical constriction in the melting zone, displacing the one end holder vertically and rotating it until the rod portion located between it and the melting zone is formed to a specific diameter larger than the inner diameter of the heating device and, after forming the rod portion to the specific cross section, vertically displacing the end holders elative to the heating device.

Abstract translation: 对半导体棒进行区域熔化的方法包括将垂直保持的杆的端部保持器横向于杆的轴线移动，使另一端部托架垂直地移动，以便进给杆部分，其直径大于环形加热的内径 围绕杆并在其中形成熔化区的装置进入熔化区，在熔化区中形成直径收缩，垂直移动一端支架并使其旋转，直到位于其与熔化区之间的杆部分形成为特定的 直径大于加热装置的内径，并且在将杆部分形成到特定横截面之后，将端部保持器垂直移位到加热装置。

公开(公告)号：US3598545A

公开(公告)日：1971-08-10

申请号：US3598545D

申请日：1970-01-05

Applicant: DOW CHEMICAL CO

Inventor： LEHMAN DUANE S

IPC: B01D9/00 ,  C01D5/00 ,  B01J17/02

CPC classification number: B01D9/005 ,  C01D5/00

Abstract: DISCLOSED HEREIN IS A NOVEL PROCESS FOR CRYSTALLIZING POTASSIUM SULFATE FROM AN AQUEOUS SOLUTION THEREOF. THE PROCESS COMPRISES INCORPORATING FROM ABOUT 0.02 TO ABOUT 0.2 PERCENT (BASED ON WEIGHT OF POTASSIUM SULFATE) OF A POLYIMINE INTO THE AQUEOUS CRYSTALLIZING SOLUTION. PRIOR TO CRYSTALLIZATION, THE PH OF THE SOLUTION IS ADJUSTED TO A LEVEL SUFFICIENT TO IMPORT A FORMAL CHARGE TO THE POLYIMINE. CRYSTALLIZATION IS ACCOMPLISHED BY COMMONLY EMPLOYED TECHNIQUES SUCH AS COOLING OR EVAPORATION. THE RESULTING CRYSTALS ARE APPROXIMATELY OF THE SAME SIZE AND ARE CONSISTENTLY HEXAGONAL IN SHAPE. IN THE ABSENCE OF THE POLYIMINE ADDITIVE, POTASSIUM SULFATE CRYSTALLIZES IN AN UNPREDICTABLE VARIETY OF FORMS WHICH HAVE POOR FILTERING AND WASHING CHARACTERISTICS.

公开(公告)号：US4177321A

公开(公告)日：1979-12-04

申请号：US907290

申请日：1978-05-18

Applicant: Jun-ichi Nishizawa

Inventor： Jun-ichi Nishizawa

IPC: C30B25/18 ,  H01L21/20 ,  B01J17/02

CPC classification number: C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02546 ,  H01L21/02581 ,  H01L21/0262 ,  Y10S438/967

Abstract: A grown crystal structure comprises a single crystal of semiconductive material having a given lattice constant grown on a spinel crystal substrate having a different lattice constant. A substance is added to one or both of the crystals and has suitable properties relative to the crystals to effectively reduce lattice strains developed in the grown crystal structure due to mismatch of the lattice constants of both crystals.

Abstract translation: 生长的晶体结构包括具有在具有不同晶格常数的尖晶石晶体衬底上生长的给定晶格常数的半导体材料的单晶。 将一种物质加入到一种或两种晶体中，并且相对于晶体具有合适的性质，以有效地减少由于两种晶体的晶格常数不匹配而在生长的晶体结构中产生的晶格应变。

公开(公告)号：US4076572A

公开(公告)日：1978-02-28

申请号：US656548

申请日：1976-02-09

Applicant: Hiroshi Kimura

Inventor： Hiroshi Kimura

IPC: C30B1/02 ,  C30B33/00 ,  B01J17/02 ,  C01G21/00 ,  C01B19/00

CPC classification number: C30B1/02 ,  C30B29/46 ,  C30B29/48 ,  C30B33/00

Abstract: Large bulk single crystals of lead tin telluride are synthesized by first mixing desired amounts of lead, tin and tellurium with, if desired, bismuth and reacting the mixture at 950.degree. C to form a source material. The source material is then converted into a single crystal by recrystallization and digestion in a uniform 850.degree. C to 860.degree. C temperature zone in order to prevent transport of material and, hence, variations in composition. Thereafter, these crystals, which are doped with bismuth, or crystals made by Bridgman or Czochralski growth, are cut into wafers and isothermally annealed at 600.degree. C to 650.degree. C under a metal-rich vapor pressure obtained from metal-rich lead tin telluride powder. Lowering of temperature to about 200.degree. C and further annealing is capable of converting p-type crystals to n-type crystals. The result of annealing, whether p-type, n-type, or intrinsic, is a low carrier concentration, high mobility crystal.

Abstract translation: 通过首先将所需量的铅，锡和碲与需要的铋混合并将混合物在950℃下反应以形成源材料来合成铅锡碲化物的大体积单晶。 然后通过在均匀的850℃至860℃的温度区域中重结晶和消化将源材料转化为单晶，以防止材料的输送，从而防止组成的变化。 然后，将这些掺有铋的晶体或由Bridgman或Czochralski生长制成的晶体切割成晶片，并在富含金属的铅锡碲化物获得的富金属蒸气压下在600℃至650℃下进行等温退火 粉末。 将温度降低至约200℃，进一步退火能够将p型晶体转变为n型晶体。 无论是p型，n型还是内在退火的结果是低载流子浓度，高迁移率晶体。

公开(公告)号：US3758672A

公开(公告)日：1973-09-11

申请号：US3758672D

申请日：1968-05-07

Applicant: MINI OF TECHNOLOGY

Inventor： LEWIS T

IPC: C01B31/36 ,  C30B11/12 ,  C30B25/00 ,  B01J17/02

CPC classification number: C30B11/12 ,  C01B32/956 ,  C01P2004/10 ,  C30B25/005 ,  C30B29/36 ,  Y10S117/906 ,  Y10T117/102

Abstract: A process for the manufacture of silicon carbide whiskers comprises heating solid-phase carbon and solid-phase silicon at a temperature of at least 1,100*C, said heating being carried out in the presence of a substrate heated to a temperature of at least 1,000*C and in an atmosphere comprising hydrogen and chlorine, whereby silicon carbide whiskers are formed upon the substrate.

公开(公告)号：US3756863A

公开(公告)日：1973-09-04

申请号：US3756863D

申请日：1970-04-30

Applicant: TEXAS INSTRUMENTS INC

Inventor： WILSON O

IPC: C30B13/00 ,  H01L31/08 ,  B01J17/02 ,  H01L3/12 ,  H01L7/42

CPC classification number: C30B13/00 ,  H01L31/08 ,  Y10S117/90 ,  Y10S117/906 ,  Y10S117/918 ,  Y10S257/917 ,  Y10S438/919

Abstract: A PROCESS IF DISCLOSED FOR MANUFACTURING MERCURYDOPED GERMANIUM PHOTOCONDUCTOR MATEIAL HAVING A SHORT TIME CONSTANT AT LIQUID NEON TEMPERATURES. THE PROCESS INCLUDES REFINING THE GERMANIUM BY A NUMBER OF MOLTEN ZONE-REFINING PASSES TO REDUCE TH IMPURITIES WHICH ACT AS SHALLOW ACCEPTORS TO A LEVEL ON THE ORDER OF 10**12 ATOMS/CM.3 OR LESS AND THEN COMPENSATING THE REMAINING SHALLOW ACCEPTORS WITH SHALLOW DONORS SUCH AS ANTIMONY OR ARSENIC AND THEN DOPING THE GERMANIUM WITH MERCURY FROM THE VAPOR STATE TO A LEVEL ON THE ORDER OF 10**14 ATOMS/CM.3 OR GREATER.

公开(公告)号：US3507616A

公开(公告)日：1970-04-21

申请号：US3507616D

申请日：1967-08-14

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： TOBIN JOSEPH M ,  FLEISCHER LEONARD R

IPC: C01B31/30 ,  C04B35/56 ,  B01J17/00 ,  B01J17/02

CPC classification number: C04B35/5622 ,  C01B32/90 ,  C04B35/5607 ,  C04B35/5611

公开(公告)号：US3423189A

公开(公告)日：1969-01-21

申请号：US3423189D

申请日：1966-01-13

Applicant: BELL TELEPHONE LABOR INC

Inventor： PFANN WILLIAM G

IPC: C30B13/16 ,  C30B13/28 ,  B01J17/02 ,  B01D9/00

CPC classification number: C30B13/16 ,  C30B13/28 ,  Y10T117/1088