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    Apparatus for controlled doping of semiconductor crystals
    2.
    发明授权
    Apparatus for controlled doping of semiconductor crystals 失效
    用于控制半导体晶体掺杂的装置

    公开(公告)号：US3858549A

    公开(公告)日：1975-01-07

    申请号：US41108973

    申请日：1973-10-30

    申请人： SIEMENS AG

    发明人： KELLER WOLFGANG

    IPC分类号： C30B13/12 ,  C23C13/08

    CPC分类号： C30B13/12

    摘要： Method and apparatus for controlled doping of semiconductor crystals whereby a semiconductor crystal is enclosed in a housing and a floating melt zone is established along the length thereof while simultaneously controlled volumes of a gaseous doping substance is directed by a conduit to the melt zone for diffusion within the resolidified semiconductor crystals. The volume of doping substance supplied to the crystal is regulated by combination pressures and feed rates, such as by combination of at least two valves having a constant volume chamber therebetween and a program that adjusts the pressure of the dopant supply above the pressure surrounding the crystal melt zone and regulates the frequency of valve operations per unit time. The invention is especially useful for producing n-doped silicon crystals.

    摘要翻译： 半导体晶体的受控掺杂的方法和装置，其中将半导体晶体封装在壳体中，并且沿着其长度建立浮动熔融区，同时将气体掺杂物质的控制体积通过导管引导至熔融区以进行扩散 再固化的半导体晶体。 提供给晶体的掺杂物质的体积由组合压力和进料速率来调节，例如通过组合至少两个具有恒定体积室的阀和将掺杂剂供应压力调整到围绕晶体的压力的程序 熔融区域，并调节每单位时间阀门操作的频率。 本发明对于生产n掺杂硅晶体特别有用。

    Device for crucible-free, floating-zonemelting a crystalline member
    3.
    发明授权
    Device for crucible-free, floating-zonemelting a crystalline member 失效
    无结构的设备，浮动 - 结构化晶体构件

    公开(公告)号：US3688006A

    公开(公告)日：1972-08-29

    申请号：US3688006D

    申请日：1970-03-27

    申请人： SIEMENS AG

    发明人： KELLER WOLFGANG

    IPC分类号： H05B6/32 ,  C30B13/20 ,  H01B17/26 ,  H01B17/30 ,  H01L21/208 ,  F27D11/06 ,  H05B5/08

    CPC分类号： H01B17/305 ,  C30B13/20

    摘要： Device for zone melting a crystalline member includes a vessel, an electrically energizable heating device mounted in the vessel for heating a melting zone formed in a crystalline member, and an electric current supply for the heating device extending into the vessel through an opening formed in a wall of the vessel, the supply comprising at least two conductors insulated from one another by an intermediate layer of insulating material having a Shore hardness in the range of 10 to 100 and an extensibility of at least 20 percent, a gas-tight adhesive connection being provided between the intermediate layer of insulating material and the surface of the conductors.

    摘要翻译： 用于区域熔化结晶构件的装置包括容器，安装在容器中用于加热形成在结晶构件中的熔化区的电可激发加热装置，以及用于加热装置的电流源，该加热装置通过形成在 该容器的至少两个导体通过绝缘材料的中间层彼此绝缘，所述绝缘材料的中间层具有10至100的肖氏硬度和至少20％的伸长率，气密粘合剂连接是 设置在绝缘材料的中间层和导体的表面之间。

    Method of crucible-free zone melting crystalline rods, especially of semiconductor material
    4.
    发明授权
    Method of crucible-free zone melting crystalline rods, especially of semiconductor material 失效
    无结晶区熔体晶体管的方法，特别是半导体材料

    公开(公告)号：US3658598A

    公开(公告)日：1972-04-25

    申请号：US3658598D

    申请日：1969-08-19

    申请人： SIEMENS AG

    发明人： KELLER WOLFGANG ,  BERGER GUNTHER

    IPC分类号： C30B13/28 ,  C30B13/30 ,  C30B13/32 ,  C30B15/08 ,  B01J17/02 ,  B01D9/00

    CPC分类号： C30B13/30 ,  C30B13/28 ,  C30B13/32 ,  C30B15/08 ,  Y10S117/901 ,  Y10S117/91 ,  Y10S117/911 ,  Y10S117/912 ,  Y10S117/917 ,  Y10T117/1072

    摘要： Method of zone melting a semiconductor rod includes displacing an end holder of the vertically held rod transversely to the rod axis, continuously displacing the other end holder vertically so as to feed a rod portion, having a diameter greater than the inner diameter of an annular heating device surrounding the rod and forming a melting zone therein, into the melting zone, forming a diametrical constriction in the melting zone, displacing the one end holder vertically and rotating it until the rod portion located between it and the melting zone is formed to a specific diameter larger than the inner diameter of the heating device and, after forming the rod portion to the specific cross section, vertically displacing the end holders elative to the heating device.

    摘要翻译： 对半导体棒进行区域熔化的方法包括将垂直保持的杆的端部保持器横向于杆的轴线移动，使另一端部托架垂直地移动，以便进给杆部分，其直径大于环形加热的内径 围绕杆并在其中形成熔化区的装置进入熔化区，在熔化区中形成直径收缩，垂直移动一端支架并使其旋转，直到位于其与熔化区之间的杆部分形成为特定的 直径大于加热装置的内径，并且在将杆部分形成到特定横截面之后，将端部保持器垂直移位到加热装置。

    Device for heater movement in crucible-free zone melting a crystalline rod
    5.
    发明授权
    Device for heater movement in crucible-free zone melting a crystalline rod 失效
    用于加热器运动的装置在可自由区域熔化一个晶体管

    公开(公告)号：US3630684A

    公开(公告)日：1971-12-28

    申请号：US3630684D

    申请日：1967-09-22

    申请人： SIEMENS AG

    发明人： KELLER WOLFGANG

    IPC分类号： C30B13/32 ,  H01L21/208 ,  B01J17/10

    CPC分类号： C30B13/32 ,  Y10T117/1088

    摘要： Device for crucible-free zone melting a crystalline rod includes a zone-melting chamber having a sidewall formed with a substantially vertical slot, heating means extending through said slot into said chamber and energizable for forming a melting zone in a substantially vertically supported crystalline rod mounted in said chamber, slide means located adjacent said sidewall and carrying said heating means, said slide means and said heating means being slidable together relative to the rod in the direction of the rod axis whereby the melting zone is passed through the rod, and an elastically deformable sealing strip mounted between said slide means and said sidewall of said zone melting chamber and completely surrounding said slot whereby said slot is gastightly sealed, said sealing strip being secured against displacement.

    Induction heat coil arrangement
    8.
    发明授权
    Induction heat coil arrangement 失效
    感应加热线圈布置

    公开(公告)号：US3898413A

    公开(公告)日：1975-08-05

    申请号：US46053874

    申请日：1974-04-12

    申请人： SIEMENS AG

    发明人： KELLER WOLFGANG

    IPC分类号： H05B6/32 ,  C30B13/20 ,  H01L21/208 ,  H05B6/36 ,  H05B5/08

    CPC分类号： H05B6/362 ,  C30B13/20

    摘要： An induction heat coil arrangement, in particular an apparatus for the crucible-free zone melt treatment of a semiconductor rod, including at least two hollow turns with a conduit for guiding a heatexchange fluid contained therein. The outer turn comprises a bent metal tube which is provided with a heat-resistant insulator sleeve to avoid arcings which are detrimental to the induction heat coil arrangement itself as well as to the quality of the semiconductor rod.

    摘要翻译： 一种感应加热线圈装置，特别是一种用于无坩埚区熔融处理半导体棒的装置，包括至少两个空心匝，其中导管用于引导其中包含的热交换流体。 外圈包括弯曲的金属管，该金属管设置有耐热绝缘套管，以避免对感应加热线圈装置本身有害的电弧以及半导体棒的质量。

    Adjustable induction coil for zone melting of semiconductor rods
    9.
    发明授权
    Adjustable induction coil for zone melting of semiconductor rods 失效
    可调电感线圈用于半导体器件的区域熔化

    公开(公告)号：US3886509A

    公开(公告)日：1975-05-27

    申请号：US43583774

    申请日：1974-01-23

    申请人： SIEMENS AG

    发明人： KELLER WOLFGANG

    IPC分类号： C30B13/20 ,  H05B6/30 ,  H05B6/36 ,  H05B6/42 ,  H01F27/28

    CPC分类号： C30B13/20 ,  H05B6/30 ,  H05B6/362 ,  H05B6/42

    摘要： A readily disassembleable and easily producible induction coil useful in crucible-free floating melt zone treatment of semiconductor rods comprised of a single or multi-turn induction coil provided with a separable ring-shaped insert which has onehalf thereof rigidly attached to an inner surface of the coil and another half separably attached to the first half with the end surfaces of the insert halves being located perpendicularly to the plane of the coil. A conduit is disposed within the insert for guiding a heat-exchange fluid therethrough.

    Apparatus for producing rod-shaped members of crystalline material
    10.
    发明授权
    Apparatus for producing rod-shaped members of crystalline material 失效
    用于生产晶体材料的R形形状成员的装置

    公开(公告)号：US3620682A

    公开(公告)日：1971-11-16

    申请号：US3620682D

    申请日：1969-10-31

    申请人： SIEMENS AG

    发明人： KELLER WOLFGANG

    IPC分类号： C30B13/32 ,  B01J17/00

    CPC分类号： C30B13/32 ,  Y10T117/1064 ,  Y10T117/1068 ,  Y10T117/1072

    摘要： Combination in apparatus for producing rod-shaped members of crystalline material includes a sealed receptacle having a top wall, bottom wall and lateral wall portions, a pair of rod holders located in the receptacle substantially along the vertical central axis of the receptacle for supporting a rodshaped member of crystalline material therebetween, heating means mounted in the receptacle for producing a melting zone in the rod-shaped crystalline member, the heating means and the holders being displaceable relative to one another for passing the melting zone along the rod-shaped crystalline member, and drive means extending into the receptacle through a wall portion other than the bottom wall portion from a location outside the receptacle for moving the holders and the heating means relative to one another.