发明授权
- 专利标题: Utilizing multiple polycrystalline silicon masks for diffusion and passivation
- 专利标题(中): 利用多个多晶硅掩模进行扩散和钝化
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申请号: US654598申请日: 1976-02-02
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公开(公告)号: US4062707A公开(公告)日: 1977-12-13
- 发明人: Hidenobu Mochizuki , Teruaki Aoki , Takeshi Matsushita , Hisao Hayashi , Masanori Okayama
- 申请人: Hidenobu Mochizuki , Teruaki Aoki , Takeshi Matsushita , Hisao Hayashi , Masanori Okayama
- 申请人地址: JA Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JA Tokyo
- 优先权: JA50-19353 19750215
- 主分类号: H01L29/73
- IPC分类号: H01L29/73 ; H01L21/033 ; H01L21/22 ; H01L21/314 ; H01L21/331 ; H01L23/29 ; H01L29/00 ; H01L21/31
摘要:
A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.
公开/授权文献
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