公开(公告)号：US20080205754A1

公开(公告)日：2008-08-28

申请号：US12010842

申请日：2008-01-30

申请人： Toshihiro Ogasawara ,  Masanori Okayama

发明人： Toshihiro Ogasawara ,  Masanori Okayama

IPC分类号： G06K9/00

CPC分类号： G01J3/50 ,  G01J3/46 ,  G01J3/462 ,  G01N21/25 ,  G01N21/274 ,  G01N21/783

摘要： A color identifying apparatus for identifying the color of a reaction surface which has caused a color reaction with a gas to be specified includes a storage that, for every set of a plurality of referential color coordinates generated pixel by pixel from RGB bitmap images of a reaction surface which has caused a color reaction with a gas, stores pieces of reference data, which respectively represent both each coordinate on a chromaticity diagram and frequencies that depend on the numbers of the referential color coordinates corresponding to each one of the coordinates on the chromaticity diagram, and identification information for identifying the reaction surface; an image capturing unit that captures an image of the reaction surface and generates RGB bitmap images of the reaction surface; an arithmetic unit that generates a plurality of measured color coordinates pixel by pixel from the RGB bitmap images generated by the image capturing unit, generates measured data, which represents both each coordinate on the chromaticity diagram and frequencies that depend on the numbers of the measured color coordinates corresponding to each one of the coordinates on the chromaticity diagram, specifies one piece of the reference data which corresponds to the measured data by checking the measured data against each piece of the reference data, and specifies the identification information which is related to the identified piece of the reference data; and an output unit that outputs the identification information specified by the arithmetic unit.

摘要翻译： 用于识别引起与要指定的气体的颜色反应的反应表面的颜色的颜色识别装置包括对于从反应的RGB位图图像逐像素地生成的每组参考色坐标的存储 已经引起与气体的颜色反应的表面存储分别表示色度图上的每个坐标的参考数据和取决于与色度图上的每个坐标对应的参考色坐标的数量的频率 以及识别反应面的识别信息; 图像捕获单元，其捕获所述反应面的图像，并生成所述反应面的RGB位图图像; 从由图像捕获单元生成的RGB位图图像中逐像素地生成多个测量颜色坐标的算术单元，生成表示色度图上的每个坐标和取决于测量颜色的数量的频率的测量数据 对应于色度图上的每个坐标的坐标通过根据每条参考数据检查测量数据来指定与测量数据相对应的一条参考数据，并且指定与所识别的相关的识别信息 参考资料片段; 以及输出单元，其输出由所述运算单元指定的所述识别信息。

公开(公告)号：US4001762A

公开(公告)日：1977-01-04

申请号：US582618

申请日：1975-06-02

申请人： Teruaki Aoki ,  Hisayoshi Yamoto ,  Masanori Okayama ,  Yoshimi Hirata ,  Shuichi Sato ,  Takaaki Yamada

发明人： Teruaki Aoki ,  Hisayoshi Yamoto ,  Masanori Okayama ,  Yoshimi Hirata ,  Shuichi Sato ,  Takaaki Yamada

IPC分类号： C01B33/02 ,  H01B1/04 ,  H01C7/00 ,  H01L21/02 ,  H01L21/208 ,  H01L21/822 ,  H01L27/04 ,  H01L29/00 ,  H01C1/012

CPC分类号： H01L28/20 ,  H01C7/006 ,  H01L29/00 ,  Y10S438/934

摘要： A thin film resistor is formed of polycrystalline silicon which contains 2 to 45 atomic percent of oxygen and wherein the resistivity of the polycrystalline silicon film varies as a function of the amount of oxygen contained in the film and wherein the resistivity is substantially higher than polycrystalline silicon not containing oxygen.

公开(公告)号：US4062707A

公开(公告)日：1977-12-13

申请号：US654598

申请日：1976-02-02

申请人： Hidenobu Mochizuki ,  Teruaki Aoki ,  Takeshi Matsushita ,  Hisao Hayashi ,  Masanori Okayama

发明人： Hidenobu Mochizuki ,  Teruaki Aoki ,  Takeshi Matsushita ,  Hisao Hayashi ,  Masanori Okayama

IPC分类号： H01L29/73 ,  H01L21/033 ,  H01L21/22 ,  H01L21/314 ,  H01L21/331 ,  H01L23/29 ,  H01L29/00 ,  H01L21/31

CPC分类号： H01L23/291 ,  H01L21/033 ,  H01L21/314 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/13091 ,  Y10S438/945

摘要： A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体层上形成含有氧原子的第一多晶硅层，在第一多晶硅层上形成含氮原子的第二多晶硅层，去除第一多晶硅层的预定部分 和第二多晶硅层，以在其中形成开口，并且通过开口将杂质材料扩散到半导体层中，以形成扩散区域。 制造工艺可以非常简化。