发明授权
US4110783A Solder layer for a semi-conductor device consisting of at least one
group V element, at least one rare element and aluminum
失效
用于由至少一个V族元素，至少一种稀有元素和铝构成的半导体器件的焊料层
- 专利标题： Solder layer for a semi-conductor device consisting of at least one group V element, at least one rare element and aluminum
- 专利标题（中）： 用于由至少一个V族元素，至少一种稀有元素和铝构成的半导体器件的焊料层
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申请号： US766503申请日： 1977-02-07
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公开(公告)号： US4110783A公开(公告)日： 1978-08-29
- 发明人: Hisakichi Onodera , Masateru Suwa , Jin Onuki , Yoshiteru Shimizu
- 申请人： Hisakichi Onodera , Masateru Suwa , Jin Onuki , Yoshiteru Shimizu
- 申请人地址： JP
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP
- 优先权： JP51-12320 19760209
- 主分类号： H01L21/52
- IPC分类号： H01L21/52 ; B23K35/28 ; H01L23/488 ; H01L23/492 ; H01L23/48 ; H01L29/46 ; H01L29/62
摘要：
A semi-conductor device comprising a silicon body having an exposed surface of N-type conductivity layer and a substrate bonded to the exposed surface by means of a layer of a new solder material, the solder material being an alloy consisting essentially of 2 to 12% by weight of at least one element of Group V of the periodic table, preferably antimony, and 0.01 to 5% by weight of at least one of rare earth elements, for example, Misch metal and aluminum being balance on the basis of total weight of the solder material. An increase in FVD of the device in which a conventional aluminum solder is used is prevented by the use of the new solder materials.
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