发明授权
- 专利标题: Back gate bias voltage generator circuit
- 专利标题(中): 背栅偏压发生电路
-
申请号: US937951申请日: 1978-08-30
-
公开(公告)号: US4260909A公开(公告)日: 1981-04-07
- 发明人: Austin C. Dumbri , Walter Rosenzweig
- 申请人: Austin C. Dumbri , Walter Rosenzweig
- 申请人地址: NJ Murray Hill
- 专利权人: Bell Telephone Laboratories, Incorporated
- 当前专利权人: Bell Telephone Laboratories, Incorporated
- 当前专利权人地址: NJ Murray Hill
- 主分类号: G05F3/20
- IPC分类号: G05F3/20 ; G11C11/407 ; G11C11/413 ; G11C11/417 ; H01L21/822 ; H01L27/04 ; H03K3/011 ; H03K3/356 ; H03K3/35 ; H03K3/353 ; H03L1/00
摘要:
A back gate bias voltage generator circuit consists of three MOS transistors (Q4, Q5, Q6) with a separate load element (Q1, Q2, Q3) coupled to the drain of each and a voltage clamp (Q7) connected to an output terminal (16). A terminal at the potential of a power supply (VCC) serves as one input and a terminal at the substrate potential (VSub) serves as another input. When the power supply (VCC) potential and the substrate potential are within normal operating ranges, the output terminal (16) assumes a reference potential (VSS). The potential of the output terminal increases in magnitude if either of the two input potentials (VSS, VSub) goes outside preselected operating ranges.
信息查询
IPC分类: