发明授权
- 专利标题： Semiconductor timing device with radioactive material at the floating gate electrode of an insulated-gate field-effect transistor
- 专利标题（中）： 具有绝缘栅场效应晶体管的浮栅的放射性材料的半导体定时装置
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申请号： US742211申请日： 1976-11-16
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公开(公告)号： US4275405A公开(公告)日： 1981-06-23
- 发明人: John M. Shannon
- 申请人： John M. Shannon
- 申请人地址： GB2 London
- 专利权人： Mullard Limited
- 当前专利权人： Mullard Limited
- 当前专利权人地址： GB2 London
- 优先权： GBX3173/73 19731011
- 主分类号： G11C29/56
- IPC分类号： G11C29/56 ; G04F5/16 ; G11C29/00 ; H01L21/8247 ; H01L29/00 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; H01L31/10 ; H01L31/119 ; G01T1/24 ; G04C3/00 ; H01L29/34
摘要：
A semiconductor timing device having a charge storage region, the charge state of which may be detected by field effect action, the charge storage region containing radioactive material which decays by emitting charged nuclear particles, so that the charge state of the charge storage region varies progressively with time.
公开/授权文献
- US5675853A Infant seat cushion 公开/授权日：1997-10-14