发明授权
- 专利标题: CMOS process
- 专利标题(中): CMOS工艺
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申请号: US133580申请日: 1980-03-24
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公开(公告)号: US4282648A公开(公告)日: 1981-08-11
- 发明人: Kenneth K. Yu , Mark T. Bohr , Mark B. Seidenfeld
- 申请人: Kenneth K. Yu , Mark T. Bohr , Mark B. Seidenfeld
- 申请人地址: CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: CA Santa Clara
- 主分类号: H01L27/08
- IPC分类号: H01L27/08 ; H01L21/225 ; H01L21/336 ; H01L21/74 ; H01L21/76 ; H01L21/762 ; H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/78 ; H01L21/22
摘要:
A CMOS Process for fabricating channel stops which are substantially formed as a by-product of growing a field oxide is described. A p-type region is formed at an edge (or edges) of an n-type well through an opening in a silicon nitride layer. An oxide is grown at the opening. As the oxide grows, n-type dopant from the n-type well accumulates at the edge of the oxide, forming a more highly doped n-type region. Simultaneously, an adjacent p-type region is formed under the oxide from the p-type dopant. The process also permits easy fabrication of a buried contact to the p-channel device thus eliminating the need for a metal contact when forming a bistable circuit.