发明授权
US4352974A Plasma etcher having isotropic subchamber with gas outlet for producing
uniform etching
失效
等离子体蚀刻机具有用于产生均匀蚀刻的气体出口的各向同性小室
- 专利标题： Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching
- 专利标题（中）： 等离子体蚀刻机具有用于产生均匀蚀刻的气体出口的各向同性小室
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申请号： US173364申请日： 1980-07-29
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公开(公告)号： US4352974A公开(公告)日： 1982-10-05
- 发明人: Tatsumi Mizutani , Norio Kanai , Kunio Harada , Hideo Komatsu , Shinya Iida
- 申请人： Tatsumi Mizutani , Norio Kanai , Kunio Harada , Hideo Komatsu , Shinya Iida
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX54-97280 19790801
- 主分类号： B23K10/00
- IPC分类号： B23K10/00 ; C30B33/00 ; H01J37/32 ; H01L21/302 ; H01L21/3065 ; H01L21/3215 ; B23K9/00 ; C23F1/02
摘要：
A plasma etcher wherein the provision of a gas outlet directly in an etching chamber is avoided and wherein a subchamber having a sufficient capacity is connected to the etching chamber through a joint part, the gas outlet being provided in this subchamber. With the apparatus, the distribution of etching rates in plasma etching becomes uniform.
公开/授权文献
- US6154425A Driving apparatus of an optical recording medium 公开/授权日：2000-11-28
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