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26 条记录 (耗时 0.015 秒)

    Method of treating surfaces with atomic or molecular beam
    2.
    发明授权
    Method of treating surfaces with atomic or molecular beam 失效
    用原子或分子束处理表面的方法

    公开(公告)号：US5554257A

    公开(公告)日：1996-09-10

    申请号：US270839

    申请日：1994-07-05

    申请人： Kenetsu Yokogawa ,  Yoshimi Kawanami ,  Tatsumi Mizutani

    发明人： Kenetsu Yokogawa ,  Yoshimi Kawanami ,  Tatsumi Mizutani

    IPC分类号： C23F4/02 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  H01L21/203 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/00

    CPC分类号： C23C16/4551 ,  C23C16/448 ,  H01L21/02046 ,  H01L21/02381 ,  H01L21/02661

    摘要： A molecular or atomic beam for cleaning or etching semiconductor substrates, or for forming a thin film on a semiconductor substrate is formed by generating a chemical reaction between at least two gases introduced into a reaction chamber. The products of the chemical reaction, and optionally additional atoms or molecules introduced into the reaction chamber, pass through an aperture to form a beam that is projected onto a sample supported in a sample chamber. The translation energy generated by the chemical reaction accelerates the atoms, molecules and/or particles to a high speed to enable cleaning, etching or depositing processes to be formed with the beam without damaging the surface of the substrate being treated.

    摘要翻译： 用于清洁或蚀刻半导体衬底或用于在半导体衬底上形成薄膜的分子或原子束通过在引入到反应室中的至少两种气体之间产生化学反应而形成。 引入到反应室中的化学反应产物和任选的另外的原子或分子通过一个孔，形成一个投影到样品室中的样品上的光束。 由化学反应产生的翻译能量使原子，分子和/或颗粒高速加速，从而能够清洗，蚀刻或沉积与光束形成的工艺，而不会损坏正被处理的衬底的表面。

    Apparatus for and method of surface treatment for microelectronic devices
    3.
    发明授权
    Apparatus for and method of surface treatment for microelectronic devices 失效
    微电子器件的表面处理装置及其方法

    公开(公告)号：US5284544A

    公开(公告)日：1994-02-08

    申请号：US599018

    申请日：1990-10-17

    申请人： Tatsumi Mizutani ,  Takashi Yunogami

    发明人： Tatsumi Mizutani ,  Takashi Yunogami

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/00

    CPC分类号： H01J37/32357

    摘要： An apparatus for surface treatment according to the present invention used for carrying out dry etching, thin film deposition and so forth is provided with a neutral beam etching apparatus in order to improve etching rate. In an embodiment, microwave wave-guides forming a duplex tube, a discharge tube, a pair of solenoids arranged coaxially, a multiaperture electrode for extracting an ion beam, gas supply pipes, a set of charged particle retarding grids, a device for controlling temperature of a specimen and a vacuum unit are provided.

    摘要翻译： 用于进行干蚀刻，薄膜沉积等的根据本发明的用于表面处理的设备设置有中性束蚀刻装置，以提高蚀刻速率。 在一个实施例中，形成双相管，放电管，同轴布置的一对螺线管的微波波导，用于提取离子束的多孔电极，气体供给管，一组带电粒子延迟栅，用于控制温度的装置 的试样和真空装置。

    Method for dry-etching
    4.
    发明授权
    Method for dry-etching 失效
    干蚀刻方法

    公开(公告)号：US4412119A

    公开(公告)日：1983-10-25

    申请号：US260813

    申请日：1981-05-05

    申请人： Hideo Komatsu ,  Shinya Iida ,  Tatsumi Mizutani ,  Kazuyoshi Ueki

    发明人： Hideo Komatsu ,  Shinya Iida ,  Tatsumi Mizutani ,  Kazuyoshi Ueki

    IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306

    CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

    摘要： A dry-etching method for working SiO.sub.2, phospho-silicate glass, Si, Mo, W, Cr, TiW, Si.sub.3 N.sub.4 or the like by the use of a glow discharge plasma involves the steps of introducing He, Ar, N.sub.2, O.sub.2 or a mixed gas thereof into a reaction chamber from the outside; and effecting the plasma discharge in the reaction chamber so that a reactive gas is liberated from a high molecular resin material arranged in the reaction chamber and containing fluorine atoms. The dry-etching method requires and uses no expensive gas containing a fluorocarbon, but has sufficient etching rate and selectivity.

    摘要翻译： 通过使用辉光放电等离子体，对SiO 2，磷硅酸盐玻璃，Si，Mo，W，Cr，TiW，Si 3 N 4等进行加工的干式蚀刻方法包括引入He，Ar，N 2，O 2或 其混合气体从外部进入反应室; 并且在反应室中进行等离子体放电，使得反应气体从布置在反应室中的含有氟原子的高分子树脂材料释放出来。 干蚀刻方法需要并且不使用含有碳氟化合物的昂贵的气体，但是具有足够的蚀刻速率和选择性。

    Method and apparatus for treating surface of semiconductor
    9.
    发明授权
    Method and apparatus for treating surface of semiconductor 有权
    用于处理半导体表面的方法和装置

    公开(公告)号：US06849191B2

    公开(公告)日：2005-02-01

    申请号：US09249292

    申请日：1999-02-12

    申请人： Tetsuo Ono ,  Tatsumi Mizutani ,  Ryouji Hamasaki ,  Tokuo Kure ,  Takafumi Tokunaga ,  Masayuki Kojima

    发明人： Tetsuo Ono ,  Tatsumi Mizutani ,  Ryouji Hamasaki ,  Tokuo Kure ,  Takafumi Tokunaga ,  Masayuki Kojima

    IPC分类号： C23F4/00 ,  H01L21/3213 ,  H01L21/00

    CPC分类号： H01J37/32137 ,  C23F4/00 ,  H01J37/32706 ,  H01L21/32137

    摘要： According to the present invention, there is provided a sample surface treating apparatus for processing a fine pattern by plasma etching, including a stage provided in a chamber, on which a sample to be subjected to a surface treatment is placed; etching gas supply source for continuously supplying an etching gas for plasma generation into the chamber; a plasma generator for generating a high-density plasma in the chamber; a bias power supply for applying a bias voltage of 100 kHz or higher to the stage independently of the plasma generation; and a pulse modulator for modulating the bias power supply at a frequency of 100 Hz to 10 kHz, wherein a surface treatment in which the minimum feature size is 1 μm or smaller is performed on the sample placed on the stage.

    摘要翻译： 根据本发明，提供了一种用于通过等离子体蚀刻处理精细图案的样品表面处理装置，包括设置在其中放置待进行表面处理的样品的室中的台阶; 蚀刻气体供给源，用于将用于等离子体产生的蚀刻气体连续地供应到所述室中; 用于在所述室中产生高密度等离子体的等离子体发生器; 偏置电源，用于独立于等离子体产生而向所述载台施加100kHz或更高的偏置电压; 以及用于以100Hz至10kHz的频率调制偏置电源的脉冲调制器，其中对放置在载物台上的样品执行最小特征尺寸为1um或更小的表面处理。