The preferred embodiment of a method of making a buried channel CCD starts with a body of P type semiconductor material over which an oxide layer and a photoresist are deposited. Openings are formed to expose regions of the body surface where drains are to be formed and N type impurity atoms are implanted through the openings. The openings are then enlarged to expose an additional area of the surface surrounding the drains and P type atoms are implanted through the enlarged openings to form channel stops. Afterward, the surface of the body is exposed and N type atoms are implanted to form buried channel regions on each side of the channel stops and to convert a thin layer of the channel stops to lightly doped compensation regions extending between the drains and the buried channel regions.