Invention Grant
- Patent Title: Lateral epitaxial growth by seeded solidification
- Patent Title (中): 通过种子凝固进行外侧外延生长
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Application No.: US254871Application Date: 1981-04-16
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Publication No.: US4371421APublication Date: 1983-02-01
- Inventor: John C. C. Fan , Michael W. Geis , Bor-Yeu Tsaur
- Applicant: John C. C. Fan , Michael W. Geis , Bor-Yeu Tsaur
- Applicant Address: MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: MA Cambridge
- Main IPC: C30B13/00
- IPC: C30B13/00 ; C30B13/06 ; C30B27/00 ; H01L21/20 ; H01L21/324 ; C30B19/00
Abstract:
An improved method and apparatus for crystallizing amorphous or polycrystalline material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and single crystalline seed material is disposed adjacent and in contact with at least a portion of the material which is to be crystallized. A layer of material which serves as a "wetting agent" is then formed over the material to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer serves to prevent deleterious balling up of the material during crystallization.
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