Invention Grant
- Patent Title: Bonding pad metallization for semiconductor devices
- Patent Title (中): 用于半导体器件的接合焊盘金属化
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Application No.: US288857Application Date: 1981-07-31
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Publication No.: US4424527APublication Date: 1984-01-03
- Inventor: Srinivas T. Rao , Jeoffrey Mott
- Applicant: Srinivas T. Rao , Jeoffrey Mott
- Applicant Address: NY Elmsford
- Assignee: Optical Information Systems, Inc.
- Current Assignee: Optical Information Systems, Inc.
- Current Assignee Address: NY Elmsford
- Main IPC: H01L23/492
- IPC: H01L23/492 ; H01S5/02 ; H01L29/46 ; H01L23/48
Abstract:
The invention is directed to a bonding pad metallization for stress sensitive semiconductor devices such as semiconductor lasers or the like. An attendant advantage is a diffusion barrier layer which inhibits the migration of conventional bonding materials such as indium solder.
Public/Granted literature
- US6070717A Point of sale display box and kit Public/Granted day:2000-06-06
Information query
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