公开(公告)号：US4424527A

公开(公告)日：1984-01-03

申请号：US288857

申请日：1981-07-31

Applicant: Srinivas T. Rao ,  Jeoffrey Mott

Inventor： Srinivas T. Rao ,  Jeoffrey Mott

IPC: H01L23/492 ,  H01S5/02 ,  H01L29/46 ,  H01L23/48

CPC classification number: H01L23/4924 ,  H01L2924/0002 ,  H01S2301/173 ,  H01S5/02236 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2231

Abstract: The invention is directed to a bonding pad metallization for stress sensitive semiconductor devices such as semiconductor lasers or the like. An attendant advantage is a diffusion barrier layer which inhibits the migration of conventional bonding materials such as indium solder.

Abstract translation: 本发明涉及用于诸如半导体激光器等的应力敏感半导体器件的焊盘金属化。 伴随的优点是阻止诸如铟焊料的常规接合材料的迁移的扩散阻挡层。