发明授权
- 专利标题： Planarization of multi-level interconnected metallization system
- 专利标题（中）： 多层次互连金属化系统的平面化
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申请号： US561778申请日： 1983-12-15
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公开(公告)号： US4470874A公开(公告)日： 1984-09-11
- 发明人: Thomas A. Bartush , Garth A. Brooks , James R. Kitcher
- 申请人： Thomas A. Bartush , Garth A. Brooks , James R. Kitcher
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/3105 ; H01L21/311 ; H01L21/3213 ; H01L21/768 ; B44C1/22 ; C03C15/00 ; C03C25/06 ; C23F1/02
摘要：
The planarization of structures having vertical interconnection studs embedded in an insulator layer utilizing a resist layer with dry etching in a CF.sub.4 ambient for equal etching of resist and the insulation to planarize the insulation, followed by dry etching in essentially a noble gas (argon) ambient for equal etching of the insulator layer and stud metal to desired planarization.
公开/授权文献
- US5601796A Method of making spinel LI2MN204 compound 公开/授权日：1997-02-11
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