A RAM memory cell in double polysilicon technology having improved packing density is attained by insulating neighboring active memory regions under a first polysilicon plane by ion implantation to increase the substrate doping of the surface of the semiconductor body whereby field shield insulation regions are generated by a transistor in the off-state and the memory regions are rendered self-conducting by the ion implantation so that with a voltage at the polysilicon-1-electrode of 0 volts, the full operating voltage can be written into the memory capacitor.