Invention Grant
- Patent Title: Charge transfer with meander channel
- Patent Title (中): 电荷转移与曲折通道
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Application No.: US486309Application Date: 1983-04-19
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Publication No.: US4558341APublication Date: 1985-12-10
- Inventor: Tadakuni Narabu , Miaki Nakashio
- Applicant: Tadakuni Narabu , Miaki Nakashio
- Applicant Address: JPX Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JPX Tokyo
- Priority: JPX57-67890 19820422
- Main IPC: H01L21/339
- IPC: H01L21/339 ; H01L27/148 ; H01L29/10 ; H01L29/762 ; H01L29/768 ; H04N5/335 ; H04N5/341 ; H04N5/372 ; G11C19/28
Abstract:
A charge transfer device having a plurality of first storage regions separated from one other by a first channel stopper region and arranged along one direction, a plurality of second storage regions opposed to the first storage regions and separated from one other by a second channel stopper region and arranged along the one direction, and first and second transfer regions placed between the first and second storage regions and arranged alternately along the one direction is disclosed, in which the first and second storage regions are displaced from one other with respect to the one direction, the adjoining first and second transfer regions along the one direction are paired, each of the pairs is in common contact with the first storage regions and is in respective contact with the separated and adjoining second storage regions, and the first and second storage regions are partially protruded to the first and second transfer regions to form protrusive portions.
Public/Granted literature
- US5695590A Anodic bonding method for making pressure sensor Public/Granted day:1997-12-09
Information query
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