发明授权
- 专利标题： Planar type semiconductor device with a high breakdown voltage
- 专利标题（中）： 具有高击穿电压的平面型半导体器件
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申请号： US587879申请日： 1984-03-14
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公开(公告)号： US4567502A公开(公告)日： 1986-01-28
- 发明人: Akio Nakagawa , Tadashi Utagawa , Tsuneo Tsukakoshi
- 申请人： Akio Nakagawa , Tadashi Utagawa , Tsuneo Tsukakoshi
- 申请人地址： JPX Kawasaki
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX56-45773 19810328
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/06 ; H01L29/40 ; H01L29/41 ; H01L29/73 ; H01L29/78 ; H01L29/86 ; H01L29/861
摘要：
A planar type semiconductor device having a high breakdown voltage, including a diffusion region of a P type formed in a semiconductor layer of an N type, a guard ring region of the P type formed in the semiconductor layer and surrounding the diffusion layer, and an insulating film covering the surface of the semiconductor layer between the diffusion and guard ring region. A field plate is provided which is kept at a potential equal to that of the diffusion region. The field plate covers the entire surface of that portion of the insulating film which is between the diffusion and guard ring regions.
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