公开(公告)号：US4567502A

公开(公告)日：1986-01-28

申请号：US587879

申请日：1984-03-14

申请人： Akio Nakagawa ,  Tadashi Utagawa ,  Tsuneo Tsukakoshi

发明人： Akio Nakagawa ,  Tadashi Utagawa ,  Tsuneo Tsukakoshi

IPC分类号： H01L21/331 ,  H01L29/06 ,  H01L29/40 ,  H01L29/41 ,  H01L29/73 ,  H01L29/78 ,  H01L29/86 ,  H01L29/861

CPC分类号： H01L29/404 ,  H01L29/0619 ,  H01L29/7811 ,  H01L29/8611

摘要： A planar type semiconductor device having a high breakdown voltage, including a diffusion region of a P type formed in a semiconductor layer of an N type, a guard ring region of the P type formed in the semiconductor layer and surrounding the diffusion layer, and an insulating film covering the surface of the semiconductor layer between the diffusion and guard ring region. A field plate is provided which is kept at a potential equal to that of the diffusion region. The field plate covers the entire surface of that portion of the insulating film which is between the diffusion and guard ring regions.

摘要翻译： 具有高击穿电压的平面型半导体器件，包括形成在N型半导体层中的P型扩散区域，形成在半导体层中并围绕扩散层的P型保护环区域，以及 绝缘膜覆盖半导体层在扩散区和保护环区之间的表面。 提供场板，其保持在与扩散区域相同的电位。 场板覆盖位于扩散区和保护环区之间的绝缘膜的该部分的整个表面。

公开(公告)号：US4546369A

公开(公告)日：1985-10-08

申请号：US545237

申请日：1983-10-25

申请人： Tsuneo Tsukakoshi ,  Hiromichi Ohashi

发明人： Tsuneo Tsukakoshi ,  Hiromichi Ohashi

IPC分类号： H01L29/74 ,  H01L29/747 ,  H01L31/111

CPC分类号： H01L31/1113 ,  H01L29/74

摘要： A light-activated bi-directional thyristor of a planar structure having P type base layers for first and second thyristors in a light receiving section, the P type base layers being separated from each other by an N type base layer. An N type emitter layer is formed at that part of the P type base layer for the second thyristor which is located on the side of the light receiving section. A first auxiliary electrode is laminated to the N type emitter layer to form an amplifying gate section. A second auxiliary electrode is formed on the P type base layer which is located opposite the light receiving section. On-current of the amplifying gate section is supplied to a shorted emitter in the second thyristor, through a connector for electrically connecting the first and second auxiliary electrodes.

摘要翻译： 一种平面结构的光激活双向晶闸管，其在光接收部分中具有用于第一和第二晶闸管的P型基极层，P型基极层通过N型基极层彼此分离。 在位于光接收部分侧的第二晶闸管的P型基极层的该部分处形成N型发射极层。 第一辅助电极层压到N型发射极层以形成放大栅极部分。 第二辅助电极形成在与受光部相对的P型基底层上。 放大栅极部分的导通电流通过用于电连接第一和第二辅助电极的连接器提供给第二晶闸管中的短路发射极。