发明授权
US4586169A Semiconductor memory circuit and large scale integrated circuit using
the same
失效
半导体存储电路和大规模集成电路使用相同
- 专利标题： Semiconductor memory circuit and large scale integrated circuit using the same
- 专利标题（中）： 半导体存储电路和大规模集成电路使用相同
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申请号： US440723申请日： 1982-11-10
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公开(公告)号： US4586169A公开(公告)日： 1986-04-29
- 发明人: Hiroyuki Itoh , Akira Masaki , Hiroki Yamashita , Satoshi Hososaka
- 申请人： Hiroyuki Itoh , Akira Masaki , Hiroki Yamashita , Satoshi Hososaka
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX56-182268 19811116
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; G11C11/411 ; H01L21/3205 ; H01L21/82 ; H01L23/52 ; H01L27/04 ; H01L27/10 ; H01L27/118 ; H03K3/2885 ; H03K19/173 ; G11C7/00 ; G11C11/40 ; G11C15/00
摘要：
A large scale integrated circuit including therein a logical gate circuit and a memory circuit is disclosed in which a large number of circuit blocks each having the same structure and including at least eight transistors and at least five resistors are arranged on a chip, and the logical gate circuit or memory circuit has a selected wiring pattern of the transistors and resistors included in the circuit block.
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