发明授权
US4591398A Method for manufacturing a semiconductor device utilizing self-aligned
oxide-nitride masking
失效
利用自对准氧化物氮化物掩模制造半导体器件的方法
- 专利标题： Method for manufacturing a semiconductor device utilizing self-aligned oxide-nitride masking
- 专利标题（中）： 利用自对准氧化物氮化物掩模制造半导体器件的方法
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申请号： US700707申请日： 1985-01-25
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公开(公告)号： US4591398A公开(公告)日： 1986-05-27
- 发明人: Norikazu Ouchi , Akio Kayanuma , Katsuaki Asano
- 申请人： Norikazu Ouchi , Akio Kayanuma , Katsuaki Asano
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX58-92697 19830526
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/033 ; H01L21/331 ; H01L29/72 ; H01L29/73 ; H01L29/732 ; H01L21/20 ; H01L21/302
摘要：
The present invention is to provide a method for manufacturing a semiconductor device of high efficiency and high integration density. The method for manufacturing a semiconductor device comprises the steps of forming semiconductive layers (30), (31) and (31') having on the surface thereof a concave portion, forming a nitride layer (35) within the concave portions forming with the nitride layer (35) as a mask an oxide layer (39) on the surface of the semiconductive layer (30), removing said nitride layer (35) and introducing an impurity into the semiconductive layers (31) and (31') with the oxide layer (39) as a mask. In accordance therewith, the elements can be made finer and hence the method of this invention is suitable for manufacturing an IC device high in efficiency and high in integration density.