发明授权
US4609407A Method of making three dimensional semiconductor devices in selectively
laser regrown polysilicon or amorphous silicon layers
失效
在选择性地激光再生多晶硅或非晶硅层中制造三维半导体器件的方法
- 专利标题： Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers
- 专利标题（中）： 在选择性地激光再生多晶硅或非晶硅层中制造三维半导体器件的方法
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申请号： US563036申请日： 1983-12-19
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公开(公告)号： US4609407A公开(公告)日： 1986-09-02
- 发明人: Tamura Masao , Hirotsugu Kozuka , Yasuo Wada , Makoto Ohkura , Tamura Hiroshi , Takashi Tokuyama , Takahiro Okabe , Osamu Minato , Shinya Ohba
- 申请人： Tamura Masao , Hirotsugu Kozuka , Yasuo Wada , Makoto Ohkura , Tamura Hiroshi , Takashi Tokuyama , Takahiro Okabe , Osamu Minato , Shinya Ohba
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX54-150080 19791121; JPX54-164059 19791219
- 主分类号： H01L21/268
- IPC分类号： H01L21/268 ; H01L21/822 ; H01L27/02 ; H01L27/06 ; H01L29/04 ; H01L21/265 ; H01L21/26
摘要：
Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.
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