摘要:
Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.
摘要:
A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
摘要:
A polycrystalline silicon film is implanted with an impurity in large amounts and is heated to be annealed, whereupon it is irradiated with a laser beam to be annealed.Thus, a polycrystalline silicon film of very low resistivity consisting of a second layer whose activated impurity concentration is equal to or below a solid solubility and a first layer whose activated impurity concentration is above the solid solubility is formed.
摘要:
A tool holder, for mounting a bit formed with a groove onto a power tool, includes a tool-holding tool, an engagement member, and a resilient member. The tool-holding tube defines a bit insertion hole that extends in an axial direction. The tool-holding tube is formed with an elongated hole that is in connection with the bit insertion hole and that extends in the axial direction. The engagement member is disposed in the elongated hole and partially protrudes into the bit insertion hole. The engagement member is movable, by abutment with and pressing force from the bit being inserted into the bit insertion hole, in the axial direction and, when located at a retraction position in the axial direction, also outward in a radial direction of the tool-holding tube. The resilient member is disposed to an outer periphery of the tool-holding tube at the retraction position. The resilient member increases in radial dimension from an initial state by pressure from the engagement member moving outward by pressing force from the bit. The resilient member resiliently returns to the initial state when pressure from the engagement member stops because the groove of the bit is located at the retraction position. As a result, the resilient member presses the engagement member inward in the radial direction into engagement with the groove of the bit.
摘要:
A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or and the third atom or molecule, a chemical bond (14) is formed between the second atom and the third atom or molecule, a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom.
摘要:
A buffer circuit ID provided for connecting an atom level device (for example, an Atom Relay Transistor circuit), formed by arranging atoms in a predetermined pattern, to a device such as a semiconductor device and a quantum device. The buffer circuit can be formed as a voltage or current amplification circuit. The voltage amplification circuit may be a single electron transistor circuit, and the current amplification circuit may be an avalanche amplification device circuit. The Atom Relay Transistor circuit and the device such as a semiconductor device and a quantum device are formed substantially on the same flat insulating member, and connected by a fine connection structure made of a conductive body such as metal.
摘要:
In a manual chain block with a driving shaft a wheel cover 15 is provided with a radial bearing 18 for supporting the driving shaft 7 at one axial end portion. The driving shaft 7 has an actuating mechanism side shaft portion for supporting an actuating mechanism 20 extended so as to be supported by the radial bearing 18, so that shaft deflection can be decreased at the time of actuating operation of the actuating mechanism 20.
摘要:
The invention provides an apparatus, and a method, for detecting the tread profile of a tire mounted about an X-axis comprising a non-contact Y detection means movable in parallel to the X-axis for measuring the distance at a right angle between such means and the peripheral surface of the tread profile in the direction of the Y-axis, X detection means for detecting the position of the Y detection means along the direction of the X-axis, data memory means for storing X and Y data pairs obtained by both such detection means, and radius calculating means for calculating the radius of the article from the X and Y data stored in the data memory means. The radius calculating means includes division means for dividing the X and Y data for a plurality of portions of the tread profile based on predetermined reference values for the tread profile of the tire being measured and arithmetic means for determining the radii of the respective portions each from the corresponding data divided by the division means, the arithmetic means determining the circle equation of: x.sup.2 +y.sup.2 +ax+by+c=0, from the X and Y data to calculate the radius of the tread profile, the coefficients a, b and c of the circle equation being determined by least square approximation.
摘要:
A telephone exchange system useful for a bank or brokerage house speech system or the like, which can accommodate a large number of lines (or trunks) and permit improvement of the reliability and call connection processing capacity. The system comprises exchange sub-systems A (EX-A) and B (EX-B) capable of independently executing an exchange operation and each accommodating a terminal. The terminal, on the other hand, has a speech channel switch for connecting a speech channel including a handset to either exchange sub-system A (EX-A) or B (EX-B). When a process of connecting a call is brought about in the terminal, that terminal selects one of the exchange subsystems and controls the speech channel switch for connecting the call to the selected exchange sub-system.