公开(公告)号：US4609407A

公开(公告)日：1986-09-02

申请号：US563036

申请日：1983-12-19

申请人： Tamura Masao ,  Hirotsugu Kozuka ,  Yasuo Wada ,  Makoto Ohkura ,  Tamura Hiroshi ,  Takashi Tokuyama ,  Takahiro Okabe ,  Osamu Minato ,  Shinya Ohba

发明人： Tamura Masao ,  Hirotsugu Kozuka ,  Yasuo Wada ,  Makoto Ohkura ,  Tamura Hiroshi ,  Takashi Tokuyama ,  Takahiro Okabe ,  Osamu Minato ,  Shinya Ohba

IPC分类号： H01L21/268 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/04 ,  H01L21/265 ,  H01L21/26

CPC分类号： H01L21/8221 ,  H01L21/268 ,  H01L27/0233 ,  H01L27/0688 ,  H01L29/04

摘要： Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.

摘要翻译： 这里公开了一种半导体器件，其具有形成在单晶半导体膜中的至少一个下电阻区域，该至少一个下电阻区域被形成为连续地涂覆单晶半导体衬底和形成在衬底表面上的绝缘膜。 由于使用上述单晶半导体膜，因此可以获得从现有技术的半导体器件中获得的许多优点。 通过用激光束照射多晶或非晶半导体膜来形成上述单晶半导体膜。