发明授权
- 专利标题: Production of a lift-off mask and its application
- 专利标题(中): 生产脱膜面膜及其应用
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申请号: US840344申请日: 1986-03-17
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公开(公告)号: US4659650A公开(公告)日: 1987-04-21
- 发明人: Holger Moritz , Gerd Pfeiffer
- 申请人: Holger Moritz , Gerd Pfeiffer
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 优先权: EPX85103349 19850322
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; G03F1/00 ; G03F1/08 ; G03F7/023 ; G03F7/039 ; G03F7/20 ; G03F7/40 ; H01L21/306 ; B05D5/12 ; H01L21/312
摘要:
A positive resist containing a weak base and polyvinyl phenol as a film forming component is deposited on a substrate, subsequently exposed imagewise, cured, blanket exposed and developed in a KOH solution at temperatures of less than 10.degree. C. The resist pattern thus obtained is exposed to light having a wavelength ranging from 300 to 320 nm and finally heat-treated at temperatures ranging from 150.degree. to 280.degree. C. The finished lift-off mask is dimensionally stable at temperatures of .ltoreq.280.degree. C. and does not emit liquid or volatile components when heated.During application of the lift-off mask, a material is blanket vapor deposited at a substrate temperature ranging from about 160.degree. to 250.degree. C. on the resist pattern having openings with overhanging walls. Subsequently, the resist pattern is dissolved in a sodium metasilicate solution, causing the material vapor deposited thereon to be lifted off, with the material deposited on the substrate directly remaining.The lift-off mask is particularly suitable for generating conductor patterns on semiconductor substrates if low and uniform contact resistances between the conductor and the semiconductor material and a high degree of pattern accuracy and packing density are required.