发明授权
- 专利标题： Method of forming trench isolation in an integrated circuit
- 专利标题（中）： 在集成电路中形成沟槽隔离的方法
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申请号： US661116申请日： 1984-10-15
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公开(公告)号： US4700464A公开(公告)日： 1987-10-20
- 发明人: Daisuke Okada , Akihisa Uchida , Toshihiko Takakura , Shinji Nakashima , Nobuhiko Ohno , Katsumi Ogiue
- 申请人： Daisuke Okada , Akihisa Uchida , Toshihiko Takakura , Shinji Nakashima , Nobuhiko Ohno , Katsumi Ogiue
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Hitachi, Ltd.,Hitachi Microcomputer Engineering, Ltd.
- 当前专利权人： Hitachi, Ltd.,Hitachi Microcomputer Engineering, Ltd.
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX58-190779 19831014
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/331 ; H01L21/76 ; H01L21/763 ; H01L29/73 ; H01L29/732 ; H01L21/22 ; H01L21/302
摘要：
A semiconductor integrated circuit device is provided with polycrystalline silicon filling U-grooves etched in a semiconductor substrate to form isolation regions which prevent any short-circuiting between the polycrystalline silicon and electrodes or wiring formed on the semiconductor substrate. A silicon dioxide film is formed within the U-grooves, and a silicon nitride film and a silicon dioxide film are further formed thereon. The silicon nitride film has a high hardness which suppresses the development of crystal defects in the peripheral active regions due to the expansion of the surface of the polycrystalline silicon when it is oxidized. When the surface of the polycrystalline silicon is oxidized, the oxidation proceeds along the oxide film over the nitride film, so that the whole of the oxide film is formed thickly. Therefore, the silicon nitride film and the silicon dioxide film are provided with an increased margin against the etching used for forming contact holes.
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