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    Method of forming trench isolation in an integrated circuit
    2.
    发明授权
    Method of forming trench isolation in an integrated circuit 失效
    在集成电路中形成沟槽隔离的方法

    公开(公告)号：US4700464A

    公开(公告)日：1987-10-20

    申请号：US661116

    申请日：1984-10-15

    申请人： Daisuke Okada ,  Akihisa Uchida ,  Toshihiko Takakura ,  Shinji Nakashima ,  Nobuhiko Ohno ,  Katsumi Ogiue

    发明人： Daisuke Okada ,  Akihisa Uchida ,  Toshihiko Takakura ,  Shinji Nakashima ,  Nobuhiko Ohno ,  Katsumi Ogiue

    IPC分类号： H01L21/31 ,  H01L21/331 ,  H01L21/76 ,  H01L21/763 ,  H01L29/73 ,  H01L29/732 ,  H01L21/22 ,  H01L21/302

    CPC分类号： H01L21/763 ,  H01L21/76 ,  Y10S438/978

    摘要： A semiconductor integrated circuit device is provided with polycrystalline silicon filling U-grooves etched in a semiconductor substrate to form isolation regions which prevent any short-circuiting between the polycrystalline silicon and electrodes or wiring formed on the semiconductor substrate. A silicon dioxide film is formed within the U-grooves, and a silicon nitride film and a silicon dioxide film are further formed thereon. The silicon nitride film has a high hardness which suppresses the development of crystal defects in the peripheral active regions due to the expansion of the surface of the polycrystalline silicon when it is oxidized. When the surface of the polycrystalline silicon is oxidized, the oxidation proceeds along the oxide film over the nitride film, so that the whole of the oxide film is formed thickly. Therefore, the silicon nitride film and the silicon dioxide film are provided with an increased margin against the etching used for forming contact holes.

    摘要翻译： 在半导体集成电路器件中设有在半导体衬底中蚀刻的多晶硅填充U形沟槽，以形成防止多晶硅与形成在半导体衬底上的电极之间的任何短路的隔离区域。 在U形槽内形成二氧化硅膜，在其上进一步形成氮化硅膜和二氧化硅膜。 氮化硅膜具有高硬度，其抑制了当多晶硅氧化时多晶硅的表面膨胀导致外围活性区域的晶体缺陷的发展。 当多晶硅的表面被氧化时，氧化膜沿着氮化物膜的氧化膜进行氧化，使得整个氧化膜形成得较厚。 因此，氮化硅膜和二氧化硅膜相对于用于形成接触孔的蚀刻具有增加的裕度。

    Method for fabricating a semiconductor integrated circuit device having thick oxide films and groove etch and refill
    4.
    发明授权
    Method for fabricating a semiconductor integrated circuit device having thick oxide films and groove etch and refill 失效
    用于制造具有厚氧化膜和凹槽蚀刻和再填充的半导体集成电路器件的方法

    公开(公告)号：US4853343A

    公开(公告)日：1989-08-01

    申请号：US169748

    申请日：1988-03-18

    申请人： Akihisa Uchida ,  Daisuke Okada ,  Toshihiko Takakura ,  Katsumi Ogiue ,  Yoichi Tamaki ,  Masao Kawamura

    发明人： Akihisa Uchida ,  Daisuke Okada ,  Toshihiko Takakura ,  Katsumi Ogiue ,  Yoichi Tamaki ,  Masao Kawamura

    IPC分类号： H01L21/316 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/768 ,  H01L23/522 ,  H01L29/73

    CPC分类号： H01L21/76224 ,  H01L21/76 ,  H01L21/76202 ,  H01L21/763 ,  H01L2924/0002 ,  Y10S438/981

    摘要： A semiconductor device employing a new isolation process is disclosed, wherein an isolation area is a region in which a burying material is buried in a deep groove formed in a semiconductor body with a substantially constant width by anisotropic dry etching, semiconductor elements are formed in selected ones of semiconductor regions isolated by the isolation area, and others of the semiconductor regions, with no semiconductor element formed therein, have their whole surface covered with a thick oxide film which is produced by the local oxidation of the semiconductor body.The new isolation process is well-suited for a bipolar type semiconductor device, wherein the deep groove is formed so as to reach a semiconductor substrate through an N.sup.+ -type buried layer, and a thick oxide film formed simultaneously with the aforementioned thick oxide film isolates the base region and collector contact region of a bipolar transistor.

    摘要翻译： 公开了一种采用新的隔离工艺的半导体器件，其中隔离区域是通过各向异性干法蚀刻将掩埋材料埋入形成在半导体主体中的宽度基本恒定的深沟槽的区域，半导体元件形成为选定的 通过隔离区域隔离的半导体区域以及其中没有形成半导体元件的其它半导体区域，其全部表面被由半导体本体的局部氧化产生的厚氧化膜覆盖。 新的隔离工艺非常适用于双极型半导体器件，其中深沟形成为通过N +型掩埋层到达半导体衬底，并且与上述厚氧化膜隔离物同时形成的厚氧化膜 双极晶体管的基极区域和集电极接触区域。

    Isolation regions formed by locos followed with groove etch and refill
    5.
    发明授权
    Isolation regions formed by locos followed with groove etch and refill 失效
    由区域形成的隔离区域随后进行凹槽蚀刻和再填充

    公开(公告)号：US4746963A

    公开(公告)日：1988-05-24

    申请号：US946778

    申请日：1986-12-29

    申请人： Akihisa Uchida ,  Daisuke Okada ,  Toshihiko Takakura ,  Katsumi Ogiue ,  Yoichi Tamaki ,  Masao Kawamura

    发明人： Akihisa Uchida ,  Daisuke Okada ,  Toshihiko Takakura ,  Katsumi Ogiue ,  Yoichi Tamaki ,  Masao Kawamura

    IPC分类号： H01L21/316 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/768 ,  H01L23/522 ,  H01L29/73 ,  H01L21/95

    CPC分类号： H01L21/76224 ,  H01L21/76 ,  H01L21/76202 ,  H01L21/763 ,  H01L2924/0002 ,  Y10S438/981

    摘要： A semiconductor device employing a new isolation process is disclosed, wherein an isolation area is a region in which a burying material is buried in a deep groove formed in a semiconductor body with a substantially constant width by anisotropic dry etching, semiconductor elements are formed in selected ones of semiconductor regions isolated by the isolation area, and others of the semiconductor regions, with no semiconductor element formed therein, have their whole surface covered with a thick oxide film which is produced by the local oxidation of the semiconductor body. The new isolation process is well-suited for a bipolar type semiconductor device, wherein the deep groove is formed so as to reach a semiconductor substrate through an N.sup.+ -type buried layer, and a thick oxide film formed simultaneously with the aforementioned thick oxide film isolates the base region and collector contact region of a bipolar transistor.

    摘要翻译： 公开了一种采用新的隔离工艺的半导体器件，其中隔离区域是通过各向异性干法蚀刻将掩埋材料埋入形成在半导体主体中的宽度基本恒定的深沟槽的区域，半导体元件形成为选定的 通过隔离区域隔离的半导体区域以及其中没有形成半导体元件的其它半导体区域，其全部表面被由半导体本体的局部氧化产生的厚氧化膜覆盖。 新的隔离工艺非常适用于双极型半导体器件，其中深沟形成为通过N +型掩埋层到达半导体衬底，并且与上述厚氧化膜隔离物同时形成的厚氧化膜 双极晶体管的基极区域和集电极接触区域。

    Image forming apparatus
    9.
    发明授权
    Image forming apparatus 有权
    图像形成装置

    公开(公告)号：US08363248B2

    公开(公告)日：2013-01-29

    申请号：US12124527

    申请日：2008-05-21

    申请人： Hideaki Matsui ,  Takeshi Fujita ,  Kazuma Saitoh ,  Daisuke Okada

    发明人： Hideaki Matsui ,  Takeshi Fujita ,  Kazuma Saitoh ,  Daisuke Okada

    IPC分类号： G06F3/12

    CPC分类号： G06F3/1214 ,  G06F3/1204 ,  G06F3/122 ,  G06F3/1228 ,  G06F3/1288

    摘要： An image forming apparatus includes a setting-information storage unit that stores plural pieces of print setting information each indicating a list of settings on printing, in association with logical printer names, a data receiving unit that receives PJL data, print drawing data, and a logical printer name from a client terminal, a parameter setting unit that compares settings included in the received PJL data and the settings in the print setting information that is stored in the setting-information storage unit and corresponds to the received logical printer name, to specify the settings included in the PJL data as print parameters, and a printing unit that prints the print drawing data using the specified print parameters.

    摘要翻译： 一种图像形成装置，包括设置信息存储单元，其存储多个打印设置信息，每个打印设置信息指示打印中的设置列表，与逻辑打印机名称相关联，接收PJL数据的数据接收单元，打印绘图数据和 参数设置单元，其将包含在接收到的PJL数据中的设置与存储在设置信息存储单元中并对应于所接收的逻辑打印机名称的打印设置信息中的设置进行比较，以指定 将包含在PJL数据中的设置作为打印参数，以及使用指定的打印参数打印打印图形数据的打印单元。

    Method and apparatus for forming image and recording medium
    10.
    发明授权
    Method and apparatus for forming image and recording medium 失效
    用于形成图像和记录介质的方法和装置

    公开(公告)号：US08305629B2

    公开(公告)日：2012-11-06

    申请号：US12475773

    申请日：2009-06-01

    申请人： Saori Iura ,  Yasuyuki Igarashi ,  Masateru Kumagai ,  Daisuke Okada

    发明人： Saori Iura ,  Yasuyuki Igarashi ,  Masateru Kumagai ,  Daisuke Okada

    IPC分类号： G06F15/00 ,  G08B23/00

    CPC分类号： G06K15/00 ,  G06K2215/0082

    摘要： One or more among a PC document receive filter, a FAX document receive filter, a read filter, and a readout filter create a report on each of the corresponding functions in a format common to the functions. A report filter changes a format of the created report as desired by the user. Therefore, when a setting for a report output process is changed, it is not necessary to change the setting with respect to each of the functions. Thus, it is possible to reduce development man-hours for the report output process.

    摘要翻译： PC文档接收滤波器，FAX文档接收滤波器，读取滤波器和读出滤波器中的一个或多个以与功能相同的格式在每个相应功能上创建报告。 报告过滤器根据用户的需要更改创建的报告的格式。 因此，当报告输出处理的设置改变时，不需要改变关于每个功能的设置。 因此，可以减少报告输出过程的开发工时。