发明授权
US4732871A Process for producing undercut dummy gate mask profiles for MESFETs
失效
用于生产MESFET的底切伪栅掩模轮廓的工艺
- 专利标题： Process for producing undercut dummy gate mask profiles for MESFETs
- 专利标题（中）： 用于生产MESFET的底切伪栅掩模轮廓的工艺
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申请号： US31648申请日： 1987-03-30
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公开(公告)号： US4732871A公开(公告)日： 1988-03-22
- 发明人: Peter L. Buchmann , Volker Graf , Peter D. Hoh , Theodor O. Mohr , Peter Vettiger
- 申请人： Peter L. Buchmann , Volker Graf , Peter D. Hoh , Theodor O. Mohr , Peter Vettiger
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 优先权： EPX86109500.8 19860711
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/285 ; H01L21/311 ; H01L21/318 ; H01L21/336 ; H01L21/338 ; H01L29/812 ; H01L21/265
摘要：
Process for producing temperature-stable undercut profiles for use in semiconductor fabrication. The process is based on the phenomenon of high etch-rate selectivity between RF- and LF- PECVD-grown silicon nitride films (12G and 13G, respectively) that are deposited on top of each other. By choosing proper film and process parameters, these PECVD nitride structures can be made stress-free: the tensile stress of the RF film (12G) compensates the compressive stress of the LF film (13G).Also disclosed is an application of a T-shaped structure (15), produced with the new process, in a method for fabricating fully self-aligned "dummy" gate sub-micron MESFETs.
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