发明授权
US4843596A Semiconductor memory device with address transition detection and timing
control
失效
具有地址转换检测和定时控制的半导体存储器件
- 专利标题: Semiconductor memory device with address transition detection and timing control
- 专利标题(中): 具有地址转换检测和定时控制的半导体存储器件
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申请号: US124554申请日: 1987-11-24
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公开(公告)号: US4843596A公开(公告)日: 1989-06-27
- 发明人: Hideshi Miyatake , Masaki Kumanoya , Hideto Hidaka , Yasuhiro Konishi , Katsumi Dosaka , Hiroyuki Yamasaki , Masaki Shimoda , Yuto Ikeda , Kazuhiro Tsukamoto
- 申请人: Hideshi Miyatake , Masaki Kumanoya , Hideto Hidaka , Yasuhiro Konishi , Katsumi Dosaka , Hiroyuki Yamasaki , Masaki Shimoda , Yuto Ikeda , Kazuhiro Tsukamoto
- 申请人地址: JPX
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX
- 优先权: JPX61-284849 19861129
- 主分类号: G11C11/401
- IPC分类号: G11C11/401 ; G11C7/22 ; G11C8/18
摘要:
A novel semiconductor memory device includes an address detection circuit that produces a short-width pulse in response to the detection of an address change. A column decoder-activating signal generator detects the start of the short-width pulse and in response generates a column decoder-activating signal. A second detection circuit detects the conclusion of the short-width pulse and generates a second pulse that triggers a preamplifier-activating signal that activates a preamplifier and latches the data that is present on the input/output line. A reset signal generator produces a reset signal to deactivate the column decoder-activating signal and to delay the preamplifier-activating signal. The preamplifier-activating signal generator and the reset signal generator are reset while the first pulse is output.
公开/授权文献
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