The solid state image sensor has a photosensing region formed on a substrate. The photosensing region has a plurality of photocells for receiving an incident image. The photosensing region is capable of changing image sampling modes by relatively shifting image sampling points for the incident image. In the photosensing region, a plurality of first transfer elements are formed and the first transfer elements receive the signal charges from adjoining photocells and transfer them out. Further, a temporary storage region is formed on the substrate having a plurality of second transfer elements therein for each of the first transfer elements. Each of the second transfer elements has a capacity to accommodate all of the signal charges of a corresponding first transfer elements which are read out from the photocells at the same time. A plurality of gate elements are respectively formed between each of the first transfer elements and their corresponding plurality of second transfer elements. Each gate elements changes transfer direction from one of the first transfer elements between at least two of the second transfer elements based on the sampling mode for the incident image. Third transfer elements are formed adjacent to the temporary storage region. The third transfer elements repeat a readout cycle of receiving the signal charges from a plurality of second transfer elements and then transferring them out.