摘要:
A solid state image sensor has a photosensing region formed on a substrate. The photosensing region has a plurality of photocells for receiving an incident image. The photosensing region is capable of changing image sampling modes by relatively shifting image sampling points for the incident image. In the photosensing region, a plurality of first transfer elements are formed and the first transfer elements receive the signal charges from adjoining photocells and transfer them out. Further, a temporary storage region is formed on the substrate having a plurality of second transfer elements therein for each of the first transfer elements. Each of the second transfer elements has a capacity to accommodate all of the signal charges of a corresponding first transfer elements which are read out from the photocells at the same time. A plurality of gate elements are respectively formed between each of the first transfer elements and their corresponding plurality of second transfer elements. Each gate elements changes transfer direction from one of the first transfer elements between at least two of the second transfer elements based on the sampling mode for the incident image. Third transfer elements are formed adjacent to the temporary storage region. The third transfer elements repeat a readout cycle of receiving the signal charges from a plurality of second transfer elements and then transferring them out.
摘要:
The solid state image sensor has a photosensing region formed on a substrate. The photosensing region has a plurality of photocells for receiving an incident image. The photosensing region is capable of changing image sampling modes by relatively shifting image sampling points for the incident image. In the photosensing region, a plurality of first transfer elements are formed and the first transfer elements receive the signal charges from adjoining photocells and transfer them out. Further, a temporary storage region is formed on the substrate having a plurality of second transfer elements therein for each of the first transfer elements. Each of the second transfer elements has a capacity to accommodate all of the signal charges of a corresponding first transfer elements which are read out from the photocells at the same time. A plurality of gate elements are respectively formed between each of the first transfer elements and their corresponding plurality of second transfer elements. Each gate elements changes transfer direction from one of the first transfer elements between at least two of the second transfer elements based on the sampling mode for the incident image. Third transfer elements are formed adjacent to the temporary storage region. The third transfer elements repeat a readout cycle of receiving the signal charges from a plurality of second transfer elements and then transferring them out.
摘要:
A solid state image sensor with a plurality of cells comprising a photoelectric converting film formed on a semiconductor substrate for photoelectrically converting incoming light rays to generate signal charge, signal charge storage areas for storing said signal charge formed in said substrate, signal charge read out areas for reading out said signal charge from said storage area, conductor electrodes for making said photoelectric converting film electrically contact with said signal charge storage areas to lead said signal charge from said photoelectric converting film to said storage areas, and series of said conductor electrodes arranged along at least two or more row lines in a matrix of said conductor electrodes being displayed in the row direction by 1/2 of the length of one electrode one from the other as viewed in the column direction.
摘要:
A solid state image sensor comprises a CCD type image sensing device and a signal detector. This signal detector comprises an FDA type signal detection circuit connected to a signal pick-up terminal of the image sensing device and having a small amount of saturating signals and low noise, an FDA type signal detection circuit connected to the signal pick-up terminal and having a large amount of saturating signals and high noise, and a signal composing circuit for composing the outputs of both signal detection circuits and outputting a composed output and changing a composing ratio in accordance with the output of the FDA type signal detection circuit.
摘要:
A solid state image sensing device comprises a great number of light receiving elements arrayed in rows and columns, a plurality of vertical CCD registers respectively coupled to columns of the light receiving elements for vertically transferring signal charges sensed by the light receiving elements, a horizontal CCD register for horizontally transferring the signal charges transferred from the vertical CCD register, an adder section for adding together signal charges obtained from a predetermined number of light receiving elements arrayed in columns and rows to form one added signal charge and for obtaining a plurality of added signal charges for all the light receiving elements in each of fields, and a field switcher for introducing signal charges obtained from an array of light receiving elements with at least one element shifted from the previous field to the adder section in each field.
摘要:
A solid state image sensing device includes a plurality of light-receiving/storage elements formed on a semiconductor substrate, vertical registers vertically extending along the light-receiving/storage elements, a horizontal register connected to ends of the vertical registers and horizontally extending, a charge read section, arranged between the light-receiving/storage element and the vertical register, for reading charge from each light-receiving/storage element to the corresponding vertical register, and a charge injection section for injecting bias charge to each light-receiving/storage element. Excessive bias charge is discharged to the semiconductor substrate through the vertical registers by setting gates in the charge read sections to be low level.
摘要:
In a CCD image sensor, a plurality of horizontal CCD registers are disposed adjacent to an image sensing area having matrix-arrayed image sensing cells and a plurality of vertical CCD registers. In the CCD image sensor, the channel impurity concentration of second horizontal CCD register, located away from the image sensing area, is more higher than that of first horizontal CCD register. With this feature, when the charges are transferred to the second horizontal CCD register across the first horizontal register, the residual charges in the first horiozntal CCD register are remarkably reduced.
摘要:
A solid image pickup apparatus comprises a plurality of photo sensing elements, arranged on a semiconductor substrate two-dimensionally and spaced mutually by specified distances, for outputting electric charges on receiving light, a semiconductor channel formed among the photo sensing elements and transferring electric charges output from the photo sensing elements. The semiconductor channel comprises cross-shaped channel members, each channel member being located inside four photo sensing elements. A plurality of vertical transfer electrodes, are provided on the channel members, for giving electric potential to the channel members and having electric charges transferred to the channel members of the next stages. Each of the channel members comprises a wide-width part and a narrow-width part located between the wide-width part and the channel member of the next stage. The narrow-width part is formed by an ion-implanting method to have a higher impurity concentration than that of the wide-width part.
摘要:
A solid-state imaging device with a variable (continuous) electronic shutter function comprises an imaging area where unit cells with photodiodes acting as pixels are arranged two-dimensionally, read lines for driving the read transistors in each pixel row, vertical selection lines for driving the vertical selection transistors in each pixel row, a vertical driving circuit for selectively driving vertical selection lines, vertical signal lines for outputting the signal from each unit cell in the pixel rows driven sequentially, and a row selection circuit for controlling the vertical driving circuit in such a manner that the vertical driving circuit drives the read transistors in each pixel row with the desired signal storage timing and signal read timing twice in that order and thereby drives the vertical selection transistors in the pixel row in synchronization with the signal read timing.
摘要:
A charge-transfer device contains a high-resistance p-well layer formed in the surface of an n-type semiconductor substrate. In the surface of the well layer, a charge-transfer n-channel layer, a charge storage n-channel layer, a charge release n-channel layer, and a charge release n-type drain are formed continuously. An output gate electrode is provided above the junction of the transfer channel layer and the storage channel layer, with an insulating film interposed therebetween. Provided above the release channel layer is a reset gate electrode with an insulating film interposed therebetween. In the surface of the storage channel layer, a charge-sensing p-channel layer of a charge-sensing transistor is formed. The charge-sensing channel layer is arranged so as to be in contact with neither the transfer channel layer nor the release channel layer. The storage channel layer is arranged so as to contain a first surface portion which adjoins the transfer channel layer and is in contact with a covering insulating film, and a second surface portion which adjoins the release channel layer and is in contact with the covering insulating film. In the surface of the substrate, a p-type source and drain layers of the charge-sensing transistor are formed so as to face each other with the sensing channel interposed therebetween. The potential of the storage channel layer without charges is set higher than that of the release drain layer.