公开(公告)号：US07472149B2

公开(公告)日：2008-12-30

申请号：US10924981

申请日：2004-08-25

申请人： Yukio Endo

发明人： Yukio Endo

IPC分类号： G06F1/02

CPC分类号： G06F7/544

摘要： A look-up table outputs an initial value, an inclination of a straight line and a correction value in response to an entry-of a high-order bit string of an operand. An offset circuit calculates an offset of the low-order bit string. A correction circuit outputs the initial value obtained by adding the correction value to at least one of the initial value and the inclination when the correction is necessary. A multiplier calculates a product of the inclination and the offset. An adder calculates the sum of the initial value and the product.

摘要翻译： 查询表响应于操作数的高位比特串的入口输出初始值，直线的斜率和校正值。 偏移电路计算低位比特串的偏移量。 校正电路输出当需要校正时将校正值加到初始值和倾斜度中的至少一个而获得的初始值。 乘数计算倾斜和偏移的乘积。 加法器计算初始值和乘积的和。

公开(公告)号：US07362366B2

公开(公告)日：2008-04-22

申请号：US10875781

申请日：2004-06-25

申请人： Yoshitaka Egawa ,  Yoriko Tanaka ,  Shinji Ohsawa ,  Yukio Endo ,  Hiromi Kusakabe ,  Nagataka Tanaka

发明人： Yoshitaka Egawa ,  Yoriko Tanaka ,  Shinji Ohsawa ,  Yukio Endo ,  Hiromi Kusakabe ,  Nagataka Tanaka

IPC分类号： H04N3/14

CPC分类号： H04N5/3658 ,  H04N5/3575 ,  H04N5/3591 ,  H04N5/361 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3741 ,  H04N5/378

摘要： In a CMOS image sensor, current leakage after a series of noise removing operations has been completed is suppressed in a read operation for each horizontal line, thereby suppressing image noise occurring on the output display screen of the image sensor. There are provided signal storage regions for storing the signals read from the unit cells in the same row selected in the imaging area onto vertical signal lines and horizontal select transistors for sequentially selecting and reading the signals stored in the individual signal storage regions and transferring them to read horizontal signal lines. At least in the period during which the signals are read from the signal storage regions, one of the drain and source of the transistor electrically connected to the signal path between the vertical signal line and horizontal signal line is biased in the reverse direction with respect to the substrate region. Two adjacent ones of the horizontal select transistors form a pair. The horizontal select transistors in each pair share one of the source/drain regions so as to be connected to the horizontal signal line in common, and the others of the source/drain regions are connected to the vertical signal line individually.

摘要翻译： 在CMOS图像传感器中，对于每个水平线的读取操作，抑制了一系列噪声去除操作之后的电流泄漏，从而抑制了图像传感器的输出显示屏幕上出现的图像噪声。 提供信号存储区域，用于将从成像区域中选择的同一行中的单位单元读取的信号存储到垂直信号线和水平选择晶体管上，用于顺序选择和读取存储在各个信号存储区域中的信号并将其传送到 读取水平信号线。 至少在从信号存储区读取信号的期间中，与垂直信号线和水平信号线之间的信号路径电连接的晶体管的漏极和源极之一相对于 衬底区域。 两个相邻的水平选择晶体管形成一对。 每对中的水平选择晶体管共享源极/漏极区域中的一个，以便与水平信号线共同连接，源极/漏极区域中的另一个分别连接到垂直信号线。

公开(公告)号：US06930722B1

公开(公告)日：2005-08-16

申请号：US09342729

申请日：1999-06-29

申请人： Nobuo Nakamura ,  Yoriko Tanaka ,  Yoshitaka Egawa ,  Shinji Ohsawa ,  Tadashi Sugiki ,  Yukio Endo

发明人： Nobuo Nakamura ,  Yoriko Tanaka ,  Yoshitaka Egawa ,  Shinji Ohsawa ,  Tadashi Sugiki ,  Yukio Endo

IPC分类号： H01L27/146 ,  H04N5/235 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/353 ,  H04N5/355 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/3745

CPC分类号： H04N5/2355 ,  H04N5/235 ,  H04N5/35527 ,  H04N5/35572 ,  H04N5/35581 ,  H04N5/372 ,  H04N5/3728 ,  H04N5/374

摘要： An image pickup apparatus comprising an array of unit cells, vertical signal lines, and a control circuit. The unit cells are arranged in rows and columns. Each unit cell has a light-receiving device for receiving light and generating an electric charge corresponding to the light, a charge-accumulating section for accumulating the electric charge generated by the light-receiving device, a transfer device for transferring the electric charge from the light-receiving device to the charge-accumulating section, and a charge-limiting device for limiting the electric charge accumulated in the charge-accumulating section. The vertical signal lines extend along the columns of unit cells, respectively, each for receiving a electric data item corresponding to the electric charge accumulated in the charge-accumulating section of any unit cell of the associated column. The control circuit controls each of the unit cells, causing the charge-limiting device to limit the charge generated by the light-receiving device during a first period and transferred to the charge-accumulating section through the transfer device. The charge generated by the light-receiving device during a second period following the first period and transferred to the charge-accumulating section through the transfer device is added to the electric charge accumulated in the charge-accumulating section.

公开(公告)号：US06801256B1

公开(公告)日：2004-10-05

申请号：US09322994

申请日：1999-06-01

申请人： Yoshitaka Egawa ,  Yoriko Tanaka ,  Shinji Ohsawa ,  Yukio Endo ,  Hiromi Kusakabe ,  Nagataka Tanaka

发明人： Yoshitaka Egawa ,  Yoriko Tanaka ,  Shinji Ohsawa ,  Yukio Endo ,  Hiromi Kusakabe ,  Nagataka Tanaka

IPC分类号： H04N314

CPC分类号： H04N5/3658 ,  H04N5/3575 ,  H04N5/3591 ,  H04N5/361 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3741 ,  H04N5/378

摘要： In a CMOS image sensor, current leakage after a series of noise removing operations has been completed is suppressed in a read operation for each horizontal line, thereby suppressing image noise occurring on the output display screen of the image sensor. There are provided signal storage regions for storing the signals read from the unit cells in the same row selected in the imaging area onto vertical signal lines and horizontal select transistors for sequentially selecting and reading the signals stored in the individual signal storage regions and transferring them to read horizontal signal lines. At least in the period during which the signals are read from the signal storage regions, one of the drain and source of the transistor electrically connected to the signal path between the vertical signal line and horizontal signal line is biased in the reverse direction with respect to the substrate region. Two adjacent ones of the horizontal select transistors form a pair. The horizontal select transistors in each pair share one of the source/drain regions so as to be connected to the horizontal signal line in common, and the others of the source/drain regions are connected to the vertical signal line individually.

公开(公告)号：US6016174A

公开(公告)日：2000-01-18

申请号：US48093

申请日：1998-03-26

申请人： Yukio Endo ,  Nobuhiro Nakamura ,  Ikuo Ogo

发明人： Yukio Endo ,  Nobuhiro Nakamura ,  Ikuo Ogo

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/1368

摘要： A method for manufacturing electo-optic elements includes steps of: (a-1) forming gate electrodes of the gate line and the TFT by patterning the first metal thin film by the first photolithography process after forming the first metal thin film on the first insulating substrate, (a-2) patterning by dry etching the semiconductor active film and the ohmic contact film by the second photolithography process in the larger and continuous form than the portion in which the source line and the TFT are formed after forming the first insulating film, semiconductor active film, and ohmic contact film, (a-3) patterning the second metal thin film by the third photolithography process after forming the second metal thin film to form the source electrode and the drain electrode of the source line as well as the TFT and in addition, etch-removing by dry etching the ohmic contact film protruding from the source line, source electrode, and drain electrode, (a-4) patterning the second insulating film and the first insulating film in the fourth photolithography process after forming the second insulating film, and forming a pixel contact hole that penetrates at least to the drain electrode surface, the first contact hole that penetrates to the first metal film surface, and the second contact hole that penetrates the second metal film surface, and (a-5) patterning the conductive thin film and forming the pixel electrode by the fifth photolithography process after forming the conductive thin film.

摘要翻译： 一种用于制造电光元件的方法包括以下步骤：（a-1）通过在第一绝缘层上形成第一金属薄膜之后通过第一光刻工艺对第一金属薄膜进行构图来形成栅极线的栅电极和TFT 通过在形成第一绝缘膜之后以比形成源极线和TFT的部分更大和连续的形式通过第二光刻工艺通过干法蚀刻半导体活性膜和欧姆接触膜来形成（a-2）图案化 ，半导体活性膜和欧姆接触膜，（a-3）在形成第二金属薄膜之后通过第三光刻工艺对第二金属薄膜进行图案化以形成源极线的源电极和漏电极以及 TFT，此外，通过干蚀刻从源极线，源电极和漏电极突出的欧姆接触膜进行蚀刻去除，（a-4）将第二绝缘膜图案化 d是在形成第二绝缘膜之后的第四光刻工艺中的第一绝缘膜，以及形成至少穿透到漏电极表面的第一接触孔，第一接触孔穿过第一金属膜表面，第二接触 穿过第二金属膜表面的孔，以及（a-5）在形成导电薄膜之后通过第五光刻工艺构图导电薄膜并形成像素电极。

公开(公告)号：US4875101A

公开(公告)日：1989-10-17

申请号：US094002

申请日：1987-09-04

申请人： Yukio Endo ,  Nozomu Harada

发明人： Yukio Endo ,  Nozomu Harada

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/355 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/376

CPC分类号： H01L27/14887 ,  H04N5/3592 ,  H04N5/3765

摘要： A multilayered CCD image sensor having semiconductive cells aligned on a substrate to define picture elements of the image sensor, and a photosensitive layer, which is provided above the substrate, is conducted to the semiconductive cells, and photovoltaicly generates charges of light radiation thereon. A vertical charge transfer section is provided on the substrate and is elongated to be parallel to a linear cell array. A horizontal charge transfer section is coupled to one end portion of the vertical charge transfer section, and a drain layer for sweeping out excess charges is coupled to the other end portion of the vertical charge transfer section. In a normal signal charge readout mode, signal charges from the cells are normally transferred to the horizontal charge transfer section through the vertical charge transfer section. A sweep-out operation of excess charges is performed during a vertical blanking period. In this case, excess charges left in the vertical charge transfer section are transferred through the vertical charge transfer section in a direction opposite to that in the normal signal charge readout mode, and are discharged to the drain layer. No excess charges flow into the horizontal charge transfer section.

摘要翻译： 具有半导体单元的多层CCD图像传感器被传导到半导体单元，并且光电产生在其上的光辐射电荷，该多层CCD图像传感器具有在基板上对准以限定图像传感器的图像元素的半导体单元和设置在基板上方的感光层。 垂直电荷转移部分设置在基板上并且被拉长以平行于线性电池阵列。 水平电荷转移部分耦合到垂直电荷转移部分的一个端部，并且用于扫除多余电荷的漏极层耦合到垂直电荷转移部分的另一端部。 在正常的信号电荷读出模式中，来自单元的信号电荷通常通过垂直电荷转移部分转移到水平电荷转移部分。 在垂直消隐期间执行多余费用的清除操作。 在这种情况下，垂直电荷转移部分剩余的多余电荷通过垂直电荷转移部分沿与正常信号电荷读出模式相反的方向传输，并被排放到漏极层。 没有多余的电荷流入水平电荷转移部分。

公开(公告)号：US4856858A

公开(公告)日：1989-08-15

申请号：US145885

申请日：1988-01-20

申请人： Hirofumi Koike ,  Yukio Endo ,  Tadashi Mitsuhashi

发明人： Hirofumi Koike ,  Yukio Endo ,  Tadashi Mitsuhashi

IPC分类号： G02B7/182 ,  G02B26/10 ,  H04N1/113 ,  H02K33/00

CPC分类号： G02B7/1821 ,  G02B26/10 ,  H04N1/1135

摘要： The present invention provides an optical scanner including a horizontally arranged base plate, a light source unit rigidly mounted on the base plate and adapted to emit a beam of light, an optical scanning unit for scanning the light beam in a repetitive cycle and an optical system unit for conducting the scanning beam to a desired surface to be irradiated, the optical scanning unit including a unit base, a torsion bar rigidly supported on the unit base at the opposite ends, a rotor rigidly mounted on the twistable portion of the torsion bar and having a mirror for reflecting the light beam, an electromagnetic drive mechanism for applying a rotational drive force to the rotor and a unit-side mirror for further reflecting the reflected light from the mirror, the optical scanning unit being arranged such that the torsion bar is disposed parallel to the base plate, the light beam being scanned along a plane perpendicular to the base plate on the rotation of the rotor and the reflected beam being scanned along a plane substantially parallel to the base plate through the unit-side mirror.

摘要翻译： 本发明提供一种光学扫描仪，包括水平布置的基板，刚性地安装在基板上并适于发射光束的光源单元，用于以重复循环扫描光束的光学扫描单元和光学系统 单元，用于将扫描光束传导到要照射的所需表面，所述光学扫描单元包括单元基座，在相对端刚性地支撑在单元基座上的扭杆，刚性地安装在扭杆的可扭转部分上的转子， 具有用于反射光束的反射镜，用于向转子施加旋转驱动力的电磁驱动机构和用于进一步反射来自反射镜的反射光的单元侧反射镜，光学扫描单元布置成使得扭杆为 平行于基板设置，沿着转子旋转时垂直于基板的平面扫描光束，反射成 沿着基本平行于基板的平面通过单元侧反射镜进行扫描。

公开(公告)号：US4764814A

公开(公告)日：1988-08-16

申请号：US65766

申请日：1987-06-24

申请人： Yukio Endo ,  Yoshitaka Egawa ,  Nozomu Harada

发明人： Yukio Endo ,  Yoshitaka Egawa ,  Nozomu Harada

IPC分类号： H01L27/148 ,  H01L29/768 ,  H04N5/335 ,  H04N5/341 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/376 ,  H04N5/378 ,  H04N3/14

CPC分类号： H04N5/3575 ,  H01L27/14831 ,  H01L29/76816 ,  H04N5/3595

摘要： A solid-state imaging device is disclosed, which includes a CCD image sensor having a detection section formed on a substrate at its output stage. The detection section receives a signal charge transferred from a photosensitive cell section, and generates an image voltage signal corresponding to the signal charge. The detection section has an electrically floating semiconductor diffusion layer formed in the substrate. A packet of signal charges from each picture element cell is temporarily stored in the diffusion layer. A reset section is provided to the output stage of the image sensor. The reset section has a reset drain layer so formed in the substrate as to be located near the diffusion layer and a reset gate for controlling flow of charges between the diffusion layer and the reset drain layer. The reset control unit is connected to the reset gate. The reset control unit applies a normal reset pulse signal to the reset gate in a vertical effective period of the image sensor. In a vertical blanking period of the image sensor, the reset control unit applies a reset pulse signal having a phase opposite to that of the normal reset pulse signal to the reset gate.

摘要翻译： 公开了一种固态成像装置，其包括具有在其输出级形成在基板上的检测部的CCD图像传感器。 检测部分接收从感光单元部分传送的信号电荷，并产生与信号电荷相对应的图像电压信号。 检测部分具有形成在基板中的电浮置半导体扩散层。 来自每个像素单元的信号电荷的分组临时存储在扩散层中。 复位部分被提供给图像传感器的输出级。 复位部分具有如此形成在衬底中的位于扩散层附近的复位漏极层和用于控制扩散层和复位漏极层之间的电荷流动的复位栅极。 复位控制单元连接到复位门。 复位控制单元在图像传感器的垂直有效期间向复位门施加正常复位脉冲信号。 在图像传感器的垂直消隐期间，复位控制单元将具有与正常复位脉冲信号相反的相位的复位脉冲信号施加到复位门。

公开(公告)号：US4758894A

公开(公告)日：1988-07-19

申请号：US875725

申请日：1986-06-18

申请人： Nozomu Harada ,  Yukio Endo ,  Yoshitaka Egawa

发明人： Nozomu Harada ,  Yukio Endo ,  Yoshitaka Egawa

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/369 ,  H04N5/372 ,  H04N3/14

CPC分类号： H04N3/1568 ,  H01L27/14665

摘要： A multilayered solid-state image sensor has a photoconductive film, which covers pixels formed on a substrate, and acts as a photoelectric converting section for the pixels. The photoconductive film inherently has traps. In an imaging mode of the image sensor, before signal charges are generated in a portion of the photoconductive film corresponding to each pixel upon irradiation of image light, sufficient bias charges to fill all the traps in the photoconductive film are injected into the photoconductive film. Subsequently, excess bias charges remaining in the photoconductive film are removed therefrom. Thus, the traps in the photoconductive film are effectively filled with the bias charges, thereby deactivating the photoconductive film.

摘要翻译： 多层固态图像传感器具有覆盖在基板上形成的像素的光电导膜，作为像素的光电转换部。 光电导膜本身具有陷阱。 在图像传感器的成像模式中，在图像光照射之后，在与每个像素相对应的光电导膜的一部分中产生信号电荷之前，将足够的偏置电荷填充到光电导膜中的所有陷阱。 随后，从其中除去残留在光电导膜中的过量偏压电荷。 因此，光电导膜中的陷阱有效地填充偏置电荷，从而使感光膜失活。

公开(公告)号：US4612581A

公开(公告)日：1986-09-16

申请号：US711022

申请日：1985-03-12

申请人： Yukio Endo ,  Nozomu Harada ,  Okio Yoshida

发明人： Yukio Endo ,  Nozomu Harada ,  Okio Yoshida

IPC分类号： H04N5/18 ,  H04N5/335 ,  H04N5/349 ,  H04N5/351 ,  H04N5/357 ,  H04N5/3725 ,  H04N5/3728 ,  H04N5/378 ,  H04N9/07 ,  H04N3/14

CPC分类号： H04N3/1587

摘要： A CCD output signal reproduction apparatus is applied to a solid state image sensor that performs a swing-driven image pickup operation. This image sensor is synchronized with one frame period and swings periodically and relatively in relation to incident light to pickup the image while changing the sampling positions in the A and B field periods. The carrier generator produces first and second sinusoidal carrier signals which have the same frequency as that of the read out frequency of the image sensor. An amplitude modulator modulates the carrier signals in response to the waveforms of the image signals supplied from the image sensor. Accordingly, amplitude-modulated A, B field image signals, which are phase-shifted by half the pixel pitch of the pixel arrangement of the image sensor. A carrier clamp circuit forcibly clamps the different peak potentials of the carrier waveforms of the amplitude-modulated field image signals to the reference potential level. In this way, when the field image signal whose waveform has been shaped is synthesized on the reproduction screen, it is possible to obtain a one frame image which has a resolution twice that determined by the actual number of pixels.

摘要翻译： CCD输出信号再现装置被应用于执行摆动驱动图像拾取操作的固态图像传感器。 该图像传感器与一个帧周期同步，并相对于入射光周期性地相对摆动，以在改变A和B场周期中的采样位置的同时拾取图像。 载波发生器产生具有与图像传感器的读出频率相同频率的第一和第二正弦载波信号。 振幅调制器响应于从图像传感器提供的图像信号的波形来调制载波信号。 因此，幅度调制的A，B场图像信号被相移了图像传感器的像素排列的像素间距的一半。 载波钳位电路强制地将幅度调制的场图像信号的载波波形的不同峰值电压钳位到参考电位电平。 以这种方式，当在再现画面上合成波形已被整形的场图像信号时，可以获得具有由实际像素数确定的分辨率的两倍的一帧图像。