发明授权
- 专利标题： Dynamic random access memory device and method of producing same
- 专利标题（中）： 动态随机存取存储器件及其制造方法
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申请号： US496107申请日： 1990-03-16
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公开(公告)号： US4974040A公开(公告)日： 1990-11-27
- 发明人: Masao Taguchi , Taiji Ema
- 申请人： Masao Taguchi , Taiji Ema
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX62-149143 19870617; JPX62-306416 19871203; JPX62-314764 19871210
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/8242 ; H01L27/108 ; H01L29/92
摘要：
A dynamic random access memory device includes a storage capacitor having a plurality of stacked conductive films which form a storage electrode. A gap is formed between elevationally adjacent conductive films so as to surround the storage electrode. A gap is also formed between an insulating film which covers a gate electrode for insulation and a lowermost film of the storage electrode. Connection between the adjacent films may be established so that an uppermost film elevationally extends so as to make contact with a drain region. Also, connection can be established so that an upper film is mounted directly on a lower film. An end portion of the film may be thicker than the other portion thereof. The stacked film structure may be produced by alternatively forming a film made of a material different from the insulating film covering the gate electrode, and a conductive film.
公开/授权文献
- US3960762A Production of absorbents 公开/授权日：1976-06-01
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