发明授权
- 专利标题： Voltage boosting circuit and operating method thereof
- 专利标题（中）： 升压电路及其工作方法
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申请号： US454580申请日： 1989-12-21
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公开(公告)号： US5010259A公开(公告)日： 1991-04-23
- 发明人: Yoshinori Inoue , Masaki Kumanoya , Takahiro Komatsu , Yasuhiro Konishi , Katsumi Dosaka
- 申请人： Yoshinori Inoue , Masaki Kumanoya , Takahiro Komatsu , Yasuhiro Konishi , Katsumi Dosaka
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX63-332238 19881228
- 主分类号： G11C11/407
- IPC分类号： G11C11/407 ; H01L21/822 ; H01L21/8242 ; H01L27/04 ; H01L27/10 ; H01L27/108 ; H02M3/07 ; H03K5/02 ; H03K19/017 ; H03K19/094
摘要：
An input signal is inverted by a CMOS inverter and provided for an output signal line. The CMOS inverter is provided between a power supply and a ground, and its node on the side of the power supply is charged all the time to prevent the potential thereof from being lowered. An output signal provided for the output signal line is delayed by a delay circuit to be applied to a boosting capacitor. The potential of the node is further boosted by this boosting capacitor. Consequently, the potential of the output signal is also boosted. When the potential of the node is raised higher than a supply voltage, an N channel MOSFET for charging is turned off to prevent a reverse flow of a charge.
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