发明授权
- 专利标题： Method of forming a highly insulative thin films
- 专利标题（中）： 形成高绝缘薄膜的方法
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申请号： US634528申请日： 1990-12-27
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公开(公告)号： US5122483A公开(公告)日： 1992-06-16
- 发明人: Shigeki Sakai , Kiyoshi Ogata , Tsukasa Hayashi
- 申请人： Shigeki Sakai , Kiyoshi Ogata , Tsukasa Hayashi
- 申请人地址： JPX Kyoto
- 专利权人： Nissin Electric Company, Limited
- 当前专利权人： Nissin Electric Company, Limited
- 当前专利权人地址： JPX Kyoto
- 优先权： JPX1-342776 19891229
- 主分类号： C23C14/10
- IPC分类号： C23C14/10 ; H01L21/31 ; H01L21/316 ; H01L21/318 ; H01L21/822 ; H01L27/04
摘要：
A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.
公开/授权文献
- US5863497A Electrostatic hand sanitizer 公开/授权日：1999-01-26
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