公开(公告)号：US5978200A

公开(公告)日：1999-11-02

申请号：US836057

申请日：1997-04-29

申请人： Naohiro Konma ,  Katsuo Tanaka

发明人： Naohiro Konma ,  Katsuo Tanaka

IPC分类号： H01H33/24 ,  H01H33/91 ,  H01H33/915 ,  H01H33/90

CPC分类号： H01H33/91 ,  H01H2033/888

摘要： The high-voltage circuit breaker with gas insulation is equipped with a device for gas-blast and blowout of the arc generated between the stationary arcing contact and the movable arcing contact when the current is interrupted. Downstream from the blowout nozzle there is located a cooling tube provided with several holes for flow of the gas placed on the outlet path of the hot gas generated by the arc. When the hot gas flows in the cooling tube, the gas pressure difference at the level of the outlet holes causes cool gas to be sucked into the tube and gives rise to a mixture of the hot and cold gases. The gas outlet to the outside of the cooling tube is sufficiently cooled to ensure the dielectric characteristics of the circuit breaker.

摘要翻译： PCT No.PCT / FR95 / 01434 Sec。 371日期1997年04月29日 102（e）日期1997年4月29日PCT提交1995年10月31日PCT公布。 出版物WO96 / 日期1996年5月9日当气体绝缘的高压断路器在电流中断时，配备有一个用于在固定电弧触点和可动电弧触点之间产生的电弧的气体爆炸和井喷的装置。 在吹出喷嘴的下游设置有冷却管，该冷却管设有若干个孔，用于流动放置在由电弧产生的热气体的出口路径上的气体。 当热气体在冷却管中流动时，出口孔处的气体压力差导致冷气被吸入管中并引起热和冷气体的混合。 冷却管外部的气体出口被充分冷却以确保断路器的介电特性。

公开(公告)号：US5046148A

公开(公告)日：1991-09-03

申请号：US522786

申请日：1990-05-14

申请人： Mamoru Nogami ,  Nobuo Nagai

发明人： Mamoru Nogami ,  Nobuo Nagai

IPC分类号： H01J37/304 ,  H01J37/317 ,  H01L21/265 ,  H01L21/677 ,  H01L21/68

CPC分类号： H01J37/3171 ,  H01J37/304

摘要： In an ion implantation apparatus comprising scanning electrodes for electrically scanning an ion beam in an X direction, a scanning power supply for supplying a scanning power to the scanning electrodes, a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction, a beam current measurement device disposed at one end section of the scanning area of the ion beam for measuring a beam current of the ion beam, and a control unit for computing the scanning speed of the target based on the beam current measured by the beam current measurement device and for controlling the drive unit so that the target is driven at the computed speed, the control unit outputs a trigger signal whenever the computation process of the scanning speed of the target is completed, and the scanning power supply outputs the scanning power for one reciprocative scanning operation of the ion beam at every time the scanning power supply receives the trigger signal from the control unit.

公开(公告)号：US4831212A

公开(公告)日：1989-05-16

申请号：US48357

申请日：1987-05-11

申请人： Kiyoshi Ogata ,  Yasunori Ando ,  Eiji Kamijo ,  Noriaki Matsumura

发明人： Kiyoshi Ogata ,  Yasunori Ando ,  Eiji Kamijo ,  Noriaki Matsumura

IPC分类号： H01L21/48 ,  H01L23/057 ,  H01L23/14

CPC分类号： H01L21/481 ,  H01L23/057 ,  H01L23/142 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16152 ,  H01L2924/16195 ,  Y10T29/49126 ,  Y10T29/49155

摘要： In a package comprising a chip mounting base and a cap to be fitted on the base, the base comprises a metal substrate, an electrically insulating ceramic layer formed on the metal substrate, a patterned metal layer formed on the ceramic layer in a selected area thereof, a first mixed layer formed in an area near the interface between the metal substrate and the ceramic layer, and a second mixed layer formed in an area near the interface between the ceramic layer and the metal layer, and the cap comprises a metal substrate, an electrically insulating ceramic layer formed in at least the marginal portion of the side of the metal substrate which faces the base, and a mixed layer that is formed in an area near the interface between the metal substrate and the cermaic layer.

摘要翻译： 在包括芯片安装基座和安装在基座上的盖子的封装中，基座包括金属基板，形成在金属基板上的电绝缘陶瓷层，在其选定区域中形成在陶瓷层上的图案化金属层 形成在金属基板和陶瓷层之间的界面附近的区域中的第一混合层，以及形成在陶瓷层和金属层之间的界面附近的区域的第二混合层，并且该盖包括金属基板， 至少形成在与金属基板相对的金属基板的边缘的边缘部分中的电绝缘陶瓷层，以及形成在金属基板和皮层之间的界面附近的区域中的混合层。

公开(公告)号：US5122483A

公开(公告)日：1992-06-16

申请号：US634528

申请日：1990-12-27

申请人： Shigeki Sakai ,  Kiyoshi Ogata ,  Tsukasa Hayashi

发明人： Shigeki Sakai ,  Kiyoshi Ogata ,  Tsukasa Hayashi

IPC分类号： C23C14/10 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01L21/02164 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/318 ,  H01L21/3185

摘要： A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.

摘要翻译： 一种形成高绝缘性氧化硅薄膜的方法，包括以下步骤：提供衬底，在衬底上沉积硅，以及同时或交替地将氧离子束或由氧气和惰性气体组成的混合气体注入到离子束 硅。 氧化硅可以与注入惰性气体的离子一起沉积在衬底上。 制造的其他金属与氧或氮阳离子的注入一起沉积。

公开(公告)号：US5068539A

公开(公告)日：1991-11-26

申请号：US522788

申请日：1990-05-14

申请人： Mamoru Nogami ,  Kazuhiro Nishikawa

发明人： Mamoru Nogami ,  Kazuhiro Nishikawa

IPC分类号： H01J37/04 ,  H01J37/317 ,  H01L21/265 ,  H01L21/677 ,  H01L21/68

CPC分类号： H01J37/3171

摘要： An ion implantation apparatus comprises a pair of scanning electrodes for statically scanning an ion beam in an X direction; a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction; a scanning power supply including a signal generator for generating a signal with a waveform corresponding to waveform data which is input from an outside and an amplifier for amplifying the signal and for outputting it to the pair of scanning electrodes; a multiple point monitor containing a large number of Faraday cups with same area disposed in the X direction for receiving the ion beam and for measuring the beam current; a monitor drive unit for moving the multiple point monitor to and from a radiation area of the scanned ion beam; and a control unit for obtaining the distribution of the beam current sum being entered into each Faraday cup according to the beam current measured by each Faraday cup of the multiple point monitor, for generating the waveform data so that the distribution of the beam current sum becomes flat, and for inputting the resultant data to the signal generator of the scanning power supply.

公开(公告)号：US5485394A

公开(公告)日：1996-01-16

申请号：US443765

申请日：1995-05-18

申请人： Kenji Murata ,  Kazuo Sonohara ,  Susumu Ito ,  Kyoji Ishizu ,  Tokuo Emura

发明人： Kenji Murata ,  Kazuo Sonohara ,  Susumu Ito ,  Kyoji Ishizu ,  Tokuo Emura

IPC分类号： H02H7/26 ,  G01R31/00

CPC分类号： H02H7/267

摘要： A method of locating a fault point in a parallel two-circuit transmission line in an n-terminal system. When a single fault occurs at one place in one circuit of the transmission line and when a multiple fault occurs at the same place in the two circuits, a distance to the fault may be calculated by the method of this invention. The method comprises the steps of transforming the transmission line into a T three-terminal parallel two-circuit transmission line circuit having three branches, calculating a value representing a length of one of the three branches on the basis of differential currents flowing into the branch points of the transmission line, determining if that value represents the distance from a terminal connected to the branch point to the fault point, employing the value as the distance to the fault point if the value represents such a distance, repeating the value calculation and determination for the other two branches if the value does not represent the distance to the fault, determining a next branch point for which to perform equivalent transformation with respect to, and repeating the previous steps until the fault is found.

摘要翻译： 一种在n端系统中的并联双回路传输线中的故障点的定位方法。 当单个故障发生在传输线路的一个电路中的一个位置，并且当在两个电路中的相同位置发生多个故障时，可以通过本发明的方法来计算到故障的距离。 该方法包括以下步骤：将传输线变换成具有三个分支的T三端并行两电路传输线电路，根据流入分支点的差分电流计算表示三个分支之一的长度的值 确定该值是否表示从连接到分支点的终端到故障点的距离，如果该值表示该距离，则将该值用作到故障点的距离，重复该值计算和确定 其他两个分支如果该值不代表与该故障的距离，则确定相对于其执行等效变换的下一分支点，并且重复前述步骤直到发现故障。

公开(公告)号：US5180918A

公开(公告)日：1993-01-19

申请号：US700451

申请日：1991-05-15

申请人： Michiro Isobe

发明人： Michiro Isobe

IPC分类号： G01T1/29 ,  G21K1/087 ,  G21K5/04 ,  H01J37/04 ,  H01J37/147 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J37/304

摘要： A method of measuring collimation of an ion beam used for electrostatically-controlled collimated scanning includes the steps of electrically detecting the ion beam to determine the time-dependent change in the scanning position of the ion beam both at an upstream location and at a downstream location of the ion beam, determining upstream and downstream positions of the ion beam at mutually corresponding times based on the time-dependent change determination, and determining the degree of collimation of the ion beam based on the relationship between the upstream and downstream positions.

公开(公告)号：US5003183A

公开(公告)日：1991-03-26

申请号：US520728

申请日：1990-05-09

申请人： Mamoru Nogami ,  Nobuo Nagai

发明人： Mamoru Nogami ,  Nobuo Nagai

IPC分类号： H01J37/317 ,  H01L21/677 ,  H01L21/68

CPC分类号： H01L21/68764 ,  H01J37/3171 ,  H01L21/68785 ,  H01L21/68792

摘要： An ion implantation apparatus comprises: an implantation chamber into which an ion beam is entered, the ion beam being scanned in an X direction; a holder for holding a wafer in the implantation chamber; and a holder drive unit for mechanically scanning the holder in a Y direction substantially perpendicular to the X direction in the implantation chamber. The holder drive unit swingingly rotates the holder so that the wafer is mechanically scanned in the Y direction.

公开(公告)号：US4829179A

公开(公告)日：1989-05-09

申请号：US70252

申请日：1987-07-06

申请人： Masahiko Aoki ,  Masashi Konishi ,  Yasuhiro Matsuda ,  Naoto Okazaki

发明人： Masahiko Aoki ,  Masashi Konishi ,  Yasuhiro Matsuda ,  Naoto Okazaki

IPC分类号： G01N23/20 ,  G01Q30/04 ,  G21K1/093 ,  H01J49/02 ,  H01J49/14 ,  H01J49/30

CPC分类号： H01J49/30 ,  G01N23/20 ,  G21K1/093 ,  H01J49/025 ,  H01J49/142

摘要： A surface analyzer for analyzing physical properties of the surface of a sample by means of PELS (Proton energy loss spectroscopy) in which accelerated ion beams such as proton beams impinge on the sample in the vertical direction to the surface of the sample and ion beams scattered from the sample are decelerated and then detected by an analyzer to analyze the energy loss of the ion beams. The surface analyzer comprises an ion beam source for generating ion beams, deflecting means for deflecting the ion beams from the ion beam source, irradiating the surface of the sample with the ion beams from the ion beam source in the vertical direction to the surface of the sample, and deflecting scattered ion beams from the sample, accelerating and decelerating means for accelerating the ion beams before the ion beams impinge on the sample and decelerating the scattered ion beams, and analyzing means for detecting the scattered beams and analyzing energy loss of the ion beams.

摘要翻译： 用于通过PELS（质子能量损失光谱法）分析样品表面的物理性质的表面分析仪，其中质子束等加速离子束在垂直方向上撞击在样品的表面上并且离子束散射 从样品减速，然后由分析仪检测，以分析离子束的能量损失。 表面分析仪包括用于产生离子束的离子束源，用于偏转来自离子束源的离子束的偏转装置，用垂直方向的离子束源的离子束照射样品的表面 采样和偏转来自样品的散射离子束，加速和减速装置，用于在离子束照射在样品上并加速散射的离子束之前加速离子束，以及分析装置，用于检测散射光束并分析离子的能量损失 梁。