发明授权
- 专利标题: A semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same
- 专利标题(中): 用于提取用于监视低电压岛屿的高电压电压的信号的半导体器件及其制造方法
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申请号: US547243申请日: 1990-07-03
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公开(公告)号: US5200638A公开(公告)日: 1993-04-06
- 发明人: Takeshi Kida , Kazumasa Satsuma , Gourab Majumdar , Tomohide Terashima , Hiroshi Yamaguchi , Masanori Fukunaga , Masao Yoshizawa
- 申请人: Takeshi Kida , Kazumasa Satsuma , Gourab Majumdar , Tomohide Terashima , Hiroshi Yamaguchi , Masanori Fukunaga , Masao Yoshizawa
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX1-340202 19891228
- 主分类号: H01L29/73
- IPC分类号: H01L29/73 ; H01L21/331 ; H01L21/336 ; H01L21/66 ; H01L29/06 ; H01L29/40 ; H01L29/732 ; H01L29/735 ; H01L29/739 ; H01L29/745 ; H01L29/78 ; H01L29/861
摘要:
On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.31 epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.
公开/授权文献
- US4518669A Electrophotographic photosensitive member 公开/授权日:1985-05-21