公开(公告)号：US5200638A

公开(公告)日：1993-04-06

申请号：US547243

申请日：1990-07-03

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/336 ,  H01L21/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/732 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.31 epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

公开(公告)号：US5279977A

公开(公告)日：1994-01-18

申请号：US997924

申请日：1992-12-29

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/336 ,  H01L21/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/732 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861 ,  H01L21/265

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

摘要翻译： 在p-衬底上，n型外延层由p阱包围和隔离。 在n外延层的表面中，在p阱附近提供p浮置区，在其上设置感测电极。 绝缘膜和导电膜形成在p阱和p浮动区之间的n外延层上以重叠。 导电膜和p浮动区域用作复合场板，这使得表面电场分布受表面电荷状态的影响很困难，通过扩展耗尽层来减轻表面电场，延伸 从n-外延层和p阱之间的pn结到电流阻挡状态的n-外延层朝向n-外延层的中心。 p浮动区域的电位由电流阻塞状态下的电容耦合决定，因此通过感测电极的感测电压特性可以是平滑的。

公开(公告)号：US5258641A

公开(公告)日：1993-11-02

申请号：US944074

申请日：1992-09-11

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861 ,  H01L29/68

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

摘要翻译： 在p-衬底上，n型外延层由p阱包围和隔离。 在n外延层的表面中，在p阱附近提供p浮置区，在其上设置感测电极。 绝缘膜和导电膜形成在p阱和p浮动区之间的n外延层上以重叠。 导电膜和p浮动区域用作复合场板，这使得表面电场分布受表面电荷状态的影响很困难，通过扩展耗尽层来减轻表面电场，延伸 从n-外延层和p阱之间的pn结到电流阻挡状态的n-外延层朝向n-外延层的中心。 p浮动区域的电位由电流阻塞状态下的电容耦合决定，因此通过感测电极的感测电压特性可以是平滑的。

公开(公告)号：US5100814A

公开(公告)日：1992-03-31

申请号：US628007

申请日：1990-12-17

申请人： Hiroshi Yamaguchi ,  Masao Yoshizawa ,  Kazumasa Satsuma ,  Takeshi Kida ,  Tomohide Terashima

发明人： Hiroshi Yamaguchi ,  Masao Yoshizawa ,  Kazumasa Satsuma ,  Takeshi Kida ,  Tomohide Terashima

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/74 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L29/78

CPC分类号： H01L21/76297 ,  H01L27/0623 ,  Y10S148/135

摘要： First and second semiconductor elements are formed in first and second semiconductor element forming regions which have the same thickness, include first and second semiconductor layers and are separated with dielectric isolation from each other. The thickness of the first semiconductor layer is made different between the first and second semiconductor element forming regions, so that the thickness of the second semiconductor layer becomes different between the first and second semiconductor element forming regions. Thus, the semiconductor device may have the semiconductor elements which have second semiconductor layers with different thicknesses in accordance with desired electrical characteristics for each of the semiconductor elements formed in the first and second semiconductor element forming regions, to complement a semiconductor device having the semiconductor elements each of which has independent optimum electrical characteristics.

摘要翻译： 第一和第二半导体元件形成在具有相同厚度的第一和第二半导体元件形成区域中，包括第一和第二半导体层并且彼此隔开隔离。 在第一和第二半导体元件形成区域之间使第一半导体层的厚度不同，使得第一半导体元件形成区域和第二半导体元件形成区域之间的第二半导体层的厚度变得不同。 因此，半导体器件可以具有根据形成在第一和第二半导体元件形成区域中的每个半导体元件的所需电特性而具有不同厚度的第二半导体层的半导体元件，以补充具有半导体元件的半导体器件 每个都具有独立的最佳电气特性。

公开(公告)号：US5455439A

公开(公告)日：1995-10-03

申请号：US329052

申请日：1994-10-26

申请人： Tomohide Terashima ,  Kazumasa Satsuma ,  Masao Yoshizawa

发明人： Tomohide Terashima ,  Kazumasa Satsuma ,  Masao Yoshizawa

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L29/06 ,  H01L29/40 ,  H01L23/535

CPC分类号： H01L29/404

摘要： The present invention relates to a semiconductor device which is fabricated in simple process steps and which prevents deterioration in a breakdown voltage. Two diffusion regions are formed in space in a surface of an n.sup.- type layer. The diffusion regions are separated from each other by an insulation layer, but each in contact with a conductive film. Another conductive film is disposed on the insulation layer. The three conductive films are insulated from each other by the insulation layer and still another overlying insulation layer. Still other conductive films are formed on the upper insulation layer, and are coupled to the three conductive films. A wiring conductive film is also formed on the upper insulation layer. The wiring conductive film has a relatively small capacitance with the three conductive films. Due to the device structure, influence of the wiring conductive film over the surface of the semiconductor device is blocked by the conductive films. Hence, an electric field concentration will not result.

摘要翻译： 本发明涉及以简单的工艺步骤制造并防止击穿电压劣化的半导体器件。 在n型层的表面的空间中形成两个扩散区域。 扩散区域通过绝缘层彼此分离，但各自与导电膜接触。 另一导电膜设置在绝缘层上。 三个导电膜通过绝缘层和另一个上覆绝缘层彼此绝缘。 其它导电膜形成在上绝缘层上，并与三个导电膜耦合。 布线导电膜也形成在上绝缘层上。 布线导电膜与三个导电膜具有相对较小的电容。 由于器件结构，导电膜在半导体器件的表面上的影响被导电膜阻挡。 因此，不会产生电场浓度。

公开(公告)号：US5574303A

公开(公告)日：1996-11-12

申请号：US325633

申请日：1994-10-19

申请人： Tomohide Terasima ,  Mituharu Tabata ,  Masao Yoshizawa ,  Kazumasa Satsuma

发明人： Tomohide Terasima ,  Mituharu Tabata ,  Masao Yoshizawa ,  Kazumasa Satsuma

IPC分类号： H01L21/66 ,  G01R19/00 ,  H01L29/06 ,  H01L29/735 ,  H01L29/739 ,  H01L29/76 ,  H01L29/94

CPC分类号： G01R19/0084 ,  H01L29/0692 ,  H01L29/735 ,  H01L29/7392

摘要： The present invention provides a semiconductor device which is excellent in voltage sense characteristic and simple in manufacturing process. P diffusion regions 12 and 13 are selectively formed on a first major surface of an N.sup.- substrate 11, an electrode 31 is formed on the P diffusion region, a sense electrode 32 is formed on the P diffusion region 13, and an electrode 33 is formed on a second major surface of the N.sup.- substrate. Then, the electrode 31 is set at 0 V, constant current is led to the sense electrode 32, and the electrode 33 is positively biased. Thus, the voltage applied to the electrode 33 is sensed from a potential obtained at the sense electrode 32. A distance between the P diffusion regions 12 and 13 which determines a voltage sense characteristic can be accurately controlled, and a good voltage sense characteristic can be obtained. Moreover, a manufacturing process is relatively simple.

摘要翻译： 本发明提供一种电压检测特性优异且制造工艺简单的半导体器件。 P扩散区12和13选择性地形成在N基板11的第一主表面上，在P扩散区上形成电极31，在P扩散区13上形成感测电极32，电极33 形成在N-底物的第二主表面上。 然后，将电极31设定为0V，将恒定电流引导到感测电极32，并且电极33被正偏置。 因此，从感测电极32获得的电位感测施加到电极33的电压。可以精确地控制确定电压感测特性的P扩散区域12和13之间的距离，并且可以获得良好的电压感测特性 获得。 此外，制造过程相对简单。

公开(公告)号：US4818731A

公开(公告)日：1989-04-04

申请号：US947237

申请日：1986-12-29

申请人： Toyonobu Mizutani ,  Masao Yoshizawa ,  Toichiro Izawa

发明人： Toyonobu Mizutani ,  Masao Yoshizawa ,  Toichiro Izawa

IPC分类号： C03B19/06 ,  B44F9/04 ,  C03C4/02 ,  C03C8/14 ,  C03C10/02 ,  C03C10/06 ,  C03C10/16 ,  C04B32/00

CPC分类号： C04B32/00 ,  B44F9/04 ,  C03C10/16 ,  C04B2103/54

摘要： A colored frit prepared by fusing by heating a material composition comprising a devitrifying substance, a coloring agent and glass, and a method for manufacturing an artificial stone made by utilizing the colored frit. In the method of manufacturing artificial stones, the colored frits alone or a mixture of at least one kind of the colored frits and at least one kind of the colored frits and at least one kind of frits containing fluormicas are sintered, so that the colored frits are devitrified and the colors of the devitrified colored frits become distinctly visible to a viewer. This produces artificial stones having a wide variety of distinct colors and patterns.

摘要翻译： 通过加热包含失透物质，着色剂和玻璃的材料组合物的熔融制备的彩色玻璃料以及通过利用彩色玻璃料制造的人造石的制造方法。 在制造人造石的方法中，烧结单独的着色玻璃料或至少一种着色玻璃料和至少一种着色玻璃料和至少一种含有氟化物的玻璃料的混合物，使得着色玻璃料 失去光泽，透明的彩色玻璃料的颜色对于观众来说是明显可见的。 这产生具有各种不同颜色和图案的人造石。

公开(公告)号：US20050233516A1

公开(公告)日：2005-10-20

申请号：US11095529

申请日：2005-04-01

申请人： Hidenori Iwadate ,  Hitoshi Kuriyama ,  Masao Yoshizawa

发明人： Hidenori Iwadate ,  Hitoshi Kuriyama ,  Masao Yoshizawa

IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732

CPC分类号： H01L21/8249 ,  H01L27/0623 ,  H01L29/732

摘要： In a semiconductor device according to the present invention, an emitter diffusion layer is formed with a polycrystal silison emitter layer serving as a diffusion source, and an impurity concentration of the polycrystal silicon emitter layer is higher than an impurity concentration of the emitter diffusion layer, wherein the emitter diffusion layer is of a shallow junction and an emitter impurity concentration is increased.

摘要翻译： 在根据本发明的半导体器件中，发射扩散层形成多晶硅发射极层作为扩散源，多晶硅发射极层的杂质浓度高于发射极扩散层的杂质浓度， 其中发射极扩散层是浅结，并且发射极杂质浓度增加。

公开(公告)号：US5064910A

公开(公告)日：1991-11-12

申请号：US448332

申请日：1989-12-11

申请人： Iwakazu Hattori ,  Mitsuhiko Sakakibara ,  Fumio Tsutsumi ,  Masao Yoshizawa

发明人： Iwakazu Hattori ,  Mitsuhiko Sakakibara ,  Fumio Tsutsumi ,  Masao Yoshizawa

IPC分类号： C08C19/00 ,  C08F36/04

CPC分类号： C08C19/00 ,  C08F36/04

摘要： A process for producing a modified conjugated diene polymer which comprises the steps of (I) polymerizing a conjugated diene in an inert organic solvent in the presence of a catalyst comprising (a) a lanthanum series rare earth element compound, (b) an organoaluminum compound represented by the general formula, AlR.sup.1 R.sup.2 R.sup.3 (wherein R.sup.1, R.sup.2 and R.sup.3 which may be same or different, are hydrogen atoms or hydrocarbon groups of 1 to 8 carbon atoms and at least one of R.sup.1, R.sup.2 and R.sup.3 is said hydrocarbon group) and, if necessary, at least one member selected from the group consisting of (c) a Lewis acid and/or (d) a Lewis base, and then (II) modifying the resulting reactive polymer with a modifying compound of the general formula, R.sup.4.sub.n MX.sub.4-n (wherein R.sup.4 is an alkyl group of 1 to 20 carbon atoms or an aryl group, M is a tin atom, X is a halogen atom, and n is an integer of 1 to 3).

摘要翻译： 一种制备改性共轭二烯聚合物的方法，包括以下步骤：（I）在惰性有机溶剂中，在催化剂存在下使共轭二烯聚合，所述催化剂包含（a）镧系稀土元素化合物，（b）有机铝化合物 由通式表示的AlR1R2R3（其中R1，R2和R3可以相同或不同，为氢原子或碳原子数1〜8的烃基，R1，R2和R3中的至少一个为所述烃基） 必要时，选自（c）路易斯酸和/或（d）路易斯碱中的至少一种，然后（II）用下列通式的修饰化合物R4nMX4- n（其中，R 4为碳原子数1〜20的烷基或芳基，M为锡原子，X为卤素原子，n为1〜3的整数）。

公开(公告)号：US4906706A

公开(公告)日：1990-03-06

申请号：US90347

申请日：1987-08-28

申请人： Iwakazu Hattori ,  Mitsuhiko Sakakibara ,  Fumio Tsutsumi ,  Masao Yoshizawa

发明人： Iwakazu Hattori ,  Mitsuhiko Sakakibara ,  Fumio Tsutsumi ,  Masao Yoshizawa

IPC分类号： C08C19/00 ,  C08F36/04

CPC分类号： C08C19/00 ,  C08F36/04

摘要： A process for producing a modified conjugated diene polymer which comprises the steps of (I) polymerizing a conjugated diene in an inert organic solvent in the presence of a catalyst comprising (a) a lanthanum series rare earth element compound, (b) an organoaluminum compound represented by the general formula, Alr.sup.1 R.sup.2 R.sup.3 (wherein R.sup.1, R.sup.2 and R.sup.3 which may be same or different, are hydrogen atoms or hydrocarbon groups of 1 to 8 carbon atoms and at least one of R.sup.1, R.sup.2 and R.sup.3 is said hydrocarbon group) and, if necessary, at least one member selected from the group consisting of (c) a Lewis acid and/or (d) a Lewis base, and then (II) modifying the resulting reactive polymer with a modifying compound selected from the group consisting of the following components (e), (f) and (g): (e) an organometal halide compound represented by the general formula, R.sub.n .sup.4 MX.sub.4-n (wherein R.sup.4 is an alkyl group of 1 to 20 carbon atoms or an aryl group, M is a tin or germanium atom, X is a halogen atom, and n is an integer of 1 to 3), (f) a heterocumulene compound or a three-membered heterocyclic compound having, in the molecule, a bond represented by the general formula, ##STR1## (wherein X.sup.1 is a carbon, nitrogen, oxygen or sulfur atom, Y is a carbon or sulfur atom, Z is a nitrogen, oxygen or sulfur atom, and X.sup.2 is a nitrogen, oxygen or sulfur atom), and (g) a halogen compound having, in the molecule, a bond represented by the general formula, ##STR2## (wherein Y.sup.1 is a nitrogen or oxygen atom and X is a halogen atom). Said modified conjugated diene polymer has excellent characteristics in wear resistance, heat generation, mechanical properties, etc.

摘要翻译： 一种制备改性共轭二烯聚合物的方法，包括以下步骤：（I）在惰性有机溶剂中，在催化剂存在下使共轭二烯聚合，所述催化剂包含（a）镧系稀土元素化合物，（b）有机铝化合物 由通式Alr 1 R 2 R 3（其中可以相同或不同的R 1，R 2和R 3是氢原子或具有1至8个碳原子的烃基，并且R 1，R 2和R 3中的至少一个是所述烃基） 必要时选自（c）路易斯酸和/或（d）路易斯碱中的至少一种，然后（II）用选自以下的修饰化合物改性所得的反应性聚合物： 以下组分（e），（f）和（g）：（e）由通式Rn4MX4-n（其中R4是1-20个碳原子的烷基或芳基）表示的有机金卤化物 是锡或锗原子，X是卤素原子，n是i 1至3的整数），（f）在分子中具有由通式表示的键的杂多烯烃化合物或三元杂环化合物，其中X1是碳，氮，氧或硫原子 Y为碳原子或硫原子，Z为氮，氧或硫原子，X2为氮，氧或硫原子），（g）分子中具有由通式 （其中Y1是氮原子或氧原子，X是卤素原子）。 所述改性共轭二烯聚合物在耐磨性，发热性，机械性能等方面具有优异的特性。